“…TBI can be better diagnosed and managed with early and point-of-care detection which requires an ultrasensitive biosensing platform with high precision, resolution, and specificity useful in diagnosis. Field effect transistors (FETs) show promise for biosensing applications as there is no requirement for optical components to convert the surface binding phenomenon into a readable signal in contrast to the existing metods like protein assays [38][39][40][41] The primary platform has been silicon-based sensors because of their maturity, low cost, and vast experience base with chemical treatments on silicon oxide or glass 38 Due to its higher operating temperature, increased chemical inertness in basic and acidic solutions, and capacity to emit blue and ultraviolet light that may be utilized for fluorescence detection of certain bio species, GaN-based semiconductors have generated attention as alternatives to silicon and are thought to have several potential applications in the realm of biosensors due to the presence of high sheet carrier density (n s ) near the heterostructure interface 38,41,42 It is very sensitive to the adsorption of analytes as the 2DEG channel of AlGaN/GaN HEMTs is located extremely near the surface and is strongly influenced by the target analytes 38,41,42 GaN HEMTs offer good biocompatibility, stable material properties, and high sensitivity for biosensing applications 38,41,42 The density of carriers in the channel changes when external conditions change such as biomolecules interacting with the gate region 38,41,42 This leads to an alteration in the drain current used as a sensing parameter. The biosensor built on GaN HEMTs has a high sensitivity to immobilized biomolecules making GaN HEMT-based biosensors an excellent choice for Aβ detection in TBI patients and its progression toward AD.…”