Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films

Silva, Alexandre; Fina, Ignasi; Sánchez, F.; Silva, José; Marques, L.; Lenzi, Veniero

doi:10.1016/j.mtphys.2023.101064

Cited by 13 publications

(2 citation statements)

References 30 publications

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“…The energy barrier for ferroelectric direction switching is calculated to be 0.98 eV/ Ta atom. The switching barrier is comparable to barriers reported in other ferroelectric systems, including HfO 2 -based ferroelectric systems, 28 indicating that 2D Ta 3 I 8 is completely applicable in experiments for ferroelectric switching. The polarization value of 7.6 × 10 −10 C/m obtained using the Berry phase method, 29,30 is comparable to recent reports for 2D SnSe, 31 phosphorene, 32 and bulk BaTiO 3 .…”

supporting

confidence: 79%

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta₃I₈ with Intrinsic Triferroicity

Xing,

Wang,

Zhao

et al. 2024

J. Phys. Chem. Lett.

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supporting

confidence: 79%

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta₃I₈ with Intrinsic Triferroicity

Xing,

Wang,

Zhao

et al. 2024

J. Phys. Chem. Lett.

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“…Moreover, the recently developed variable cell solid state NEB method fixed the deficiency of NEB in the solid state transition. 68 Recently, Silva et al 67 reported a epitaxial orthorhombic phase in La doped HfO 2 films with a constantly decreasing coercive field for 2–5 at% La-doping and suggested that the reason is the defects of doping lower the energy barrier in different pathways of polarization switching in the domain wall as shown in Fig. 5c and d, and could lead to a large polarization value (∼70 μC cm −2 ).…”

Section: Ferroelectric Origin In Hfo2mentioning

confidence: 95%

Recent progress on defect-engineering in ferroelectric HfO₂: The next step forward via multiscale structural optimization

Yan,

Wu,

Liu

et al. 2024

Mater. Horiz.

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Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Wang,

Chen,

Yun

et al. 2025

Adv Funct Materials

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Ferroelectrics are considered to be promising candidates for highly energy‐efficient electronic devices in future information technologies owing to their nonvolatile and low‐energy operation of spontaneous electric polarization. Driven by the pervasive and growing demands for miniaturization and energy efficiency in nanoelectronics, further reductions in the operating voltage of ferroelectric‐based devices are dispensable and thus have received immense attentions. Recent remarkable advances in atomic‐scale synthesis, cutting‐edge characterizations, and multiscale theoretical calculations of ferroelectrics have gained unprecedented insights into the manipulation of emergent functionalities in multiple length scales, which helps the discovery of nontrivial polar structures and designs of device architectures toward the promise of ultralow‐power consumption. Here, state‐of‐the‐art strategies for reducing operating voltage in ferroelectric materials and devices are reviewed. This article starts with a brief introduction and major achievements in ferroelectrics, and expounds on the techniques to probe the polarization‐switching process. Moreover, this article focuses predominantly on recent advancements in achieving low operating voltages through various prevalent strategies such as thickness scaling, defect engineering, chemical doping, surface and interfacial design, strain engineering. Finally, perspectives with scientific and technical challenges are discussed, aiming to facilitate the energy‐efficient applications of ferroelectric materials and devices in future information technologies.

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Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films

Cited by 13 publications

References 30 publications

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta₃I₈ with Intrinsic Triferroicity

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta₃I₈ with Intrinsic Triferroicity

Recent progress on defect-engineering in ferroelectric HfO₂: The next step forward via multiscale structural optimization

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

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Unraveling the ferroelectric switching mechanisms in ferroelectric pure and La doped HfO2 epitaxial thin films

Cited by 13 publications

References 30 publications

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta3I8 with Intrinsic Triferroicity

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta3I8 with Intrinsic Triferroicity

Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

Review of Ferroelectric Materials and Devices toward Ultralow Voltage Operation

Contact Info

Product

Resources

About

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta₃I₈ with Intrinsic Triferroicity

Independent Electrical Control of Spin and Valley Degrees in 2D Breathing Kagome Ta₃I₈ with Intrinsic Triferroicity

Recent progress on defect-engineering in ferroelectric HfO₂: The next step forward via multiscale structural optimization