Unraveling the Performance of All‐Inorganic Lead‐Free CsSnI₃‐Based Perovskite Photovoltaic with Graphene Oxide Hole Transport Layer

Abstract

Addressing the imperative need to eliminate hazardous lead from the widely used metal halide perovskite photovoltaics (PPVs), the search for efficient and stable lead‐free perovskite alternatives remains pivotal. Herein, a performance analysis of lead‐free, all‐inorganic cesium tin triiodide (CsSnI3)‐based PPVs with a graphene oxide hole transporting layer using solar cell capacitance simulator is presented. Various parameters to optimize the PPV performance, including CsSnI3 layer thickness, defect density, interface defect, parasitic resistances, and working temperature are explored. The optimization process yielded remarkable results, with open‐circuit voltage of 0.87 V, short‐circuit current density of 32.55 mA cm−2, fill factor of 77.59%, and power conversion efficiency of 22.15%. The proposed device structure and parameters not only contribute to the advancement of these experimental works but also offer a novel strategy for the structural optimization of lead‐free PPVs, thereby paving new avenues for future research in this area.

SCAPS-1D Simulation for Device Optimization to Improve Efficiency in Lead-Free CsSnI3 Perovskite Solar Cells

“…The bandgap and electron affinity for each material are given as follows: FTO (3.2 eV, 4.4 eV), ZnO (3.3 eV, 4.0 eV), CsSnI 3 (1.4 eV, 3.6 eV), and NiO x (3.6 eV, 1.8 eV) [106][107][108][109]. For the perovskite absorption layer (PAL), the band-to-band recombination model was maintained at a radiative recombination coefficient of 3 × 10 −11 cm 3 and an Auger capture rate of 1 × 10 −29 cm 6 /s for both carriers (electrons and holes) [110,111]. The dielectric permittivity values for each material were 9, 8.656, 9.93, and 10.7, respectively.…”