Unravelling the magnetism, thermophysical, mechanical and thermoelectric properties of Co-based heuslers: An ab-initio prospective

Interfacial electronic properties between PtSe2and 2D metal electrodes: a first-principles simulation

“…Therefore, the ability of PtSe 2 to form an ohmic contact with metal is a key factor in designing a high-performance FET with PtSe 2 as the channel material. Even though bulk electrodes exhibited excellent electrical, mechanical, thermal, and magnetic properties, [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63][64] contact with the channel material usually produces the FLP effect, generating a Schottky barrier that affects charge transport. However, when a 2D metal is employed as an electrode, the weak interaction of the contacts can overcome FLP by avoiding metal-and disorder-induced gap states.…”