“…At first, it was identified as a semiconductor with an optical band gap of 3.4–3.7 eV featuring a ligand-to-metal charge transfer excitation. ,, Later, by using the photoluminescence spectra of MOF-5 for assessment of its purity, it was shown that the method of synthesis used by early studies leads to the presence of ZnO impurities within the framework, and these impurities can exhibit the observed semiconducting behavior . Subsequent experimental studies also showed that the photoluminescence and absorption spectra of MOF-5 are very sensitive to the presence of water and structural damage, ,, further raising questions on the early works. The studies that followed showed that the onset of the optical absorption of possibly impurity-free MOF-5 is located at ∼3.8–4.1 eV. ,− In parallel, several computational works − have established a semiconducting behavior of this MOF, and closely related ones, , upon a computed band gap of around 3.6 eV using Kohn–Sham density functional theory (DFT) with semilocal Perdew–Burke–Ernzerhof (PBE) parametrization of exchange correlation (XC).…”