Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Ketterer, Bernt; Heiß, Martin; Uccelli, Emanuele; Arbiol, Jordi; Morral, Anna Fontcuberta i

doi:10.1021/nn202585j

Cited by 126 publications

(158 citation statements)

References 53 publications

(83 reference statements)

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“…4. As mentioned in the introduction, in case of GaP the E 1 (LO) phonon mode corresponds to coupling of electronic energy states with  9hh  7C ,  7V  7C and  9hh  8C transitions and the allowed intensity resonance of the A 1 (LO) mode corresponds to  7V  7C symmetry states of the electronic structure [10,21]. It is to be noted that for GaP band structure, the difference in energy between  9hh and 7lh is nearly zero [19].…”

Section: Resultsmentioning

confidence: 95%

“…The resonance of E 1 (LO) phonon mode corresponds to coupling of electronic energy states in the band structure with  9hh  7C ,  7  7C and  9hh  8C transitions. On the other hand, the allowed intensity resonance of the A 1 (LO) mode corresponds to  7  7C symmetry states of the electronic structure [10,21] Here  7 can be either  7V or  lh depending on the electronic band structure of the particular system . Thus, one expects resonance of E 1 (LO) mode for three different excitation energies in the optical range (corresponding to three different coupling of electronic energy states of different symmetries), one of which should match with the resonance energy of the A 1 (LO) mode.…”

Section: Introductionmentioning

confidence: 99%

“…Till date most of the works reported in this area are on arsenic based WZ III-V semiconductor NWs. From RR measurements of the 2LO mode of GaAs NWs, Ketterer et al [10] and  7lh  7C states in GaAs NWs. The paper is silent about the selection rule followed by above individual LO modes of WZ phase in electron-phonon coupling [7].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Panda¹,

Roy²,

Gemmi³

et al. 2013

Applied Physics Letters

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Raman measurements are performed on defect-free wurzite GaP nanowires. Resonance Raman measurements are carried out over the excitation energy range between 2.19 and 2.71 eV.Resonances at 2.38 eV and 2.67 eV of the E 1 (LO) mode and at 2.67 eV of the A 1 (LO) are observed. The presence of these intensity resonances clearly demonstrates the existence of energy states with  9hh and  7V ( 7C ) symmetries of the valence (conduction) band and allows to measure WZ phase GaP band energies at the  point. In addition, we have investigated temperature dependent resonant Raman measurements, which allowed us to extrapolate the zero temperature values of  point energies, along with the crystal field and spin-orbit splitting energies. Above results provide a feedback for refining available theoretical calculations to derive the correct wurtzite III-V semiconductor band structure.

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Section: Resultsmentioning

confidence: 95%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Panda¹,

Roy²,

Gemmi³

et al. 2013

Applied Physics Letters

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“…The latter was found to be close to the value (103 meV) extracted from recent resonant Raman spectroscopy. 24 The crystal field splitting parameter of GaAs, c , which is the splitting between the 5 and 1 levels in the absence of spin-orbit splitting, was found in Ref. 20 to be sensitive to strain.…”

Section: Analyses Of Experimental Data and Discussionmentioning

confidence: 98%

“…The most recent theoretical calculations 20 agree well with the measured value by resonant Raman spectroscopy. 24 On the other hand, theories agree that the zinc-blende/wurtzite heterointerface exhibits a staggered-type II band alignment, as schematically presented in Fig. 1(b).…”

Section: Introductionmentioning

confidence: 87%

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

et al. 2012

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We conducted temperature-dependent measurements of the photoluminescence (PL) polarization on GaAs nanowires (NWs) with polytypic zinc-blende/wurtzite structure in order to probe the symmetry and energy structure of the valence band in the wurtzite segments of the NWs. The low-temperature measurements revealed that in most of the investigated cases, the ground level of the interface excitons responsible for the PL is formed by the heavy hole. To describe the observed temperature dependence of the degree of PL polarization, we developed a theoretical model that allows an estimation of the splitting between the heavy hole and light hole exciton subbands in these NWs. This splitting is smaller than expected in pure wurtzite on the basis of recent first-principles calculations, which may be attributed to the multiple twinned nature of the wurtzite sections, which effectively behave as a polytype of lower hexagonality.

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Realization of Wurtzite GaSb Using InAs Nanowire Templates

Namazi

Gren

Nilsson

et al. 2018

Adv Funct Materials

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The crystal structure of a material has a large impact on the electronic and material properties such as band alignment, bandgap energy, and surface energies. Au-seeded III-V nanowires are promising structures for exploring these effects, since for most III-V materials they readily grow in either wurtzite or zinc blende crystal structure. In III-Sb nanowires however, wurtzite crystal structure growth has proven difficult. Therefore, other methods must be developed to achieve wurtzite antimonides. For GaSb, theoretical predictions of the band structure diverge significantly, but the absence of wurtzite GaSb material has prevented any experimental verification of the properties. Having access to this material is a critical step toward clearing the uncertainty in the electronic properties, improving the theoretical band structure models and potentially opening doors toward application of this material. This work demonstrates the use of InAs wurtzite nano wires as templates for realizing GaSb wurtzite shell layers with varying thicknesses. The properties of the axial and radial heterointerfaces are studied at the atomic scale by means of aberration-corrected scanning transmission electron microscopy, revealing their sharpness and structural quality. The transport characterizations point toward a positive offset in the valence band edge of wurtzite compared to zinc blende.

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Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy

Cited by 126 publications

References 53 publications

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Electronic band structure of wurtzite GaP nanowires via temperature dependent resonance Raman spectroscopy

Valence band structure of polytypic zinc-blende/wurtzite GaAs nanowires probed by polarization-dependent photoluminescence

Realization of Wurtzite GaSb Using InAs Nanowire Templates

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