1957
DOI: 10.1007/bf00901624
|View full text |Cite
|
Sign up to set email alerts
|

Untersuchungen in den Dreistoffsystemen: Molybdän-Silizium-Bor, Wolfram-Silizium-Bor und in dem System: VSi2−TaSi2

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

2
55
1
1

Year Published

1991
1991
2018
2018

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 122 publications
(59 citation statements)
references
References 0 publications
2
55
1
1
Order By: Relevance
“…The compositional boundary of MojSij {T, phase) on the Mo-rich side extends to -37 at% Si and on the Si-rich side to -39 at% Si. The B solubility in the T, phase has been found to be much more limited than that reported by Nowotny [57Now] and is in agreement with a recent assessment [OOHue].…”
Section: Security Classification Ofsupporting
confidence: 80%
“…The compositional boundary of MojSij {T, phase) on the Mo-rich side extends to -37 at% Si and on the Si-rich side to -39 at% Si. The B solubility in the T, phase has been found to be much more limited than that reported by Nowotny [57Now] and is in agreement with a recent assessment [OOHue].…”
Section: Security Classification Ofsupporting
confidence: 80%
“…The silicide Mo$is, on the other hand, has much poor oxidation resistance at high temperatures. However, the oxidation properties of Mo#i~can be substantially improved by adding boron, as mentioned in the article of Nowotny et al [7]. The excellent oxidation resistance of Mo#iJ-base silicides doped with B has been confirmed recently by Meyer et al [1][2][3].…”
Section: Introductionmentioning
confidence: 51%
“…Moreover, Si and B are available in smaller quantities than Mo, meaning that SiB x formation would go at the cost of both MoSi x and MoB x formation. Furthermore, the segregation of the MoB x and MoSi x in two layers can be attributed to the low solubility of B in MoSi x , 13 and the large interfacial energy associated with a possible eutectic structure. As for the sequence of the two layers: for a MoSi x on MoB x structure, the travel distance for Si would be relatively small, because it does not have to travel through the MoB x layer in order to reach the Mo underneath.…”
Section: A Mo/b/simentioning
confidence: 99%