Unusual electromechanical response in rubrene single crystals

Matta, Micaela; Pereira, Marco; Gali, Sai Manoj; Thuau, Damien; Olivier, Yoann; Briseño, Alejandro L.; Dufour, Isabelle; Ayela, Cédric; Wantz, Guillaume; Muccioli, Luca

doi:10.1039/c7mh00489c

Cited by 31 publications

(77 citation statements)

References 57 publications

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“…Requiring a similar setup to the one used for OFET's characterization, the method has reproducibly confirmed mobility values of some of the best p‐ and n‐type materials. In the quest for understanding the charge transport mechanisms taking place in organic semiconductors, OFETs have been used to study the impact of temperature and pressure on mobility, leading to the observation of increased values at lower temperature and higher pressure/strain, result of reduced dynamic disorder . The highest reproducibly attained mobility has been achieved by Frisbie et al on deuterated rubrene vacuum gap single‐crystal OFETs, hitting a strikingly high 45 cm 2 V −1 s −1 below 100K .…”

Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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The field of organic electronics has been prolific in the last couple of years, leading to the design and synthesis of several molecular semiconductors presenting a mobility in excess of 10 cm2 V−1 s−1. However, it is also started to recently falter, as a result of doubtful mobility extractions and reduced industrial interest. This critical review addresses the community of chemists and materials scientists to share with it a critical analysis of the best performing molecular semiconductors and of the inherent charge transport physics that takes place in them. The goal is to inspire chemists and materials scientists and to give them hope that the field of molecular semiconductors for logic operations is not engaged into a dead end. To the contrary, it offers plenty of research opportunities in materials chemistry.

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Section: Charge Transportmentioning

confidence: 99%

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

et al. 2020

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“…We start by observing that the absolute value of the mobility we compute for the unstrained rubrene crystal when accounting for intrinsic energetic disorder only (∆ = 0), The dependence of mobility on strain is shown in Figure 7 for showing an increase of µ upon compression, 6,8,9 the effect of strain along the crystal axis b…”

Section: Transient Localization Mobility Calculationsmentioning

confidence: 99%

“…Substantial differences have been, however, reported on quantitative aspects. By taking the dimensionless strain factor g = d(µ−µ 0 )/µ 0 d (µ 0 is the mobility in the absence of strain) as a measure of the electro-mechanical response of a given system, the values reported in the literature for the best characterized rubrene crystal range from g ∼ 6 9 (i.e. 6% mobility variation at 1% strain) to g ∼ 200.…”

Section: Introductionmentioning

confidence: 99%

Electronic Structure, Electron-Phonon Coupling, and Charge Transport in Crystalline Rubrene Under Mechanical Strain

et al. 2019

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Motivated by the potential for application of organic semiconductors in flexible electronics, we present a theoretical study aiming at elucidating the interplay between mechanical strain and electronic, vibrational and charge transport properties of the prototypical high-mobility molecular semiconductor rubrene. Our study considers several factors that can play a role in the electro-mechanical response of a soft, van-der-Waals bonded, molecular crystal, such as intermolecular charge transfer integrals, lattice dynamics and electron phonon coupling. We find that compressive strain leads to an increase in magnitude of charge transfer integrals but also of the energetic disorder hampering the mobility. Charge transport simulations, based on the transient localization framework and fed with first-principles inputs, reveal a remarkably different response to strain applied along different crystal axes, in line with most recent experiments. The critical interplay between energetic disorder of intrinsic and extrinsic nature on the mobility-strain relationship is also discussed. The theoretical approach proposed in this work paves the way for the systematic study of the electro-mechanical response of different classes of high-mobility molecular semiconductors.

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“…[3,8] We instead elected to use mechanical force to stretch polymer-supported palladium thin films to induce strain throughout the bulk of the electrode.External force was delivered to the 50 nm-thick palladium film using af lexible polymer support that was mechanically stretched. This method of stretching af lexible substrate with a1 0-50 nm layer of metal electrocatalyst on the surface has been used to correlate activity to strain for various electrochemical reactions (e.g., HER, [18][19][20][21][22] OER, [17] ORR [23][24][25][26] and others [27][28][29][30] ), but not for HER at ap alladium electrode.…”

Section: Introductionmentioning

confidence: 99%

Strain Influences the Hydrogen Evolution Activity and Absorption Capacity of Palladium

et al. 2020

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Strain engineering can increase the activity and selectivity of an electrocatalyst. Tensile strain is knownt o improve the electrocatalytic activity of palladium electrodes for reduction of carbon dioxide or dioxygen, but determining how strain affects the hydrogen evolution reaction (HER) is complicated by the fact that palladium absorbs hydrogen concurrently with HER. We report here ac ustom electrochemical cell, whichapplies tensile strain to aflexible working electrode,t hat enabled us to resolve howt ensile strain affects hydrogen absorption and HER activity for at hin film palladium electrocatalyst. When the electrodes were subjected to mechanically-applied tensile strain, the amount of hydrogen that absorbed into the palladium decreased, and HER electrocatalytic activity increased. This study showcases how strain can be used to modulate the hydrogen absorption capacity and HER activity of palladium.

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Unusual electromechanical response in rubrene single crystals

Abstract: Multiscale modeling and experimental measurements highlight the strong coupling between mechanical stress and mobility along the two in-plane orthogonal crystalline directions in rubrene FETs.

Cited by 31 publications

References 57 publications

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Molecular Semiconductors for Logic Operations: Dead‐End or Bright Future?

Electronic Structure, Electron-Phonon Coupling, and Charge Transport in Crystalline Rubrene Under Mechanical Strain

Strain Influences the Hydrogen Evolution Activity and Absorption Capacity of Palladium

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