Unusual exchange bias effects induced in NiFe/Mn thin films via ion-beam bombardment: Superlattice vs. nanocomposite

Liu, Chi-Hsin; Shueh, Chin; Lan, Tien-Chi; Lin, Ko‐Wei; Chen, Wen-Chen; Wu, Te‐Ho; Desautels, R. D.; Lierop, J. van

doi:10.3938/jkps.62.1958

Cited by 6 publications

(2 citation statements)

References 17 publications

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“…As a common AF material, Mn is widely used in the exchange biased structures. [12][13][14][15][16][17][18][19][20] The published works have demonstrated the effect of the oxidization of Mn, 16,21) the Mn doping, [22][23][24] and the Mn diffusion 15,25,26) on the exchangebiased thin films. However, the influence of the ion-beam bombardment on Mn=NiFe bilayers has not yet been reported.…”

Section: Introductionmentioning

confidence: 99%

Structural and magnetic characterization of Mn/NiFe bilayers with ion-beam-assisted deposition

Wu¹,

Zheng²,

Chiu³

et al. 2017

Jpn. J. Appl. Phys.

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The exchange bias effect in ferromagnetic (FM)/antiferromagnetic (AF) bilayer structures has been widely investigated because its underlying principle is critical for spintronic applications. In this work, the effect of Ar + beam bombardment on the microstructural and magnetic properties of the Mn/NiFe thin films was investigated. The in-situ Ar + bombardment nontrivially promoted the Mn/NiFe intermixing and facilitated the formation of the FeMn phase, accompanied by a remarkable reduction of Mn and NiFe layer thickness. The enhanced Mn/NiFe intermixing greatly disordered the interfacial spins, inhibiting the interfacial exchange coupling and giving rise to a significant decrease of the exchange bias field (H ex). The facilitated Mn/NiFe intermixing effect also dramatically degraded the magnetocrystalline anisotropy of the NiFe crystallites, leading to a notable suppression of the coercivity (H c). These results indicate that both the exchange bias and coercivity of the Mn/NiFe bilayers can be directly affected by the in-situ Ar + bombardment, offering an effective way to modify the magnetism of the exchange-bias systems.

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Section: Introductionmentioning

confidence: 99%

Structural and magnetic characterization of Mn/NiFe bilayers with ion-beam-assisted deposition

Wu¹,

Zheng²,

Chiu³

et al. 2017

Jpn. J. Appl. Phys.

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“…4. The maximum of the ZFC magnetization is related to the thermal demagnetization of the layer as the crystallites become superparamagnetic (thermal fluctuation effects described above) 7 at a blocking temperature, T B,SP . Below T B,SP , the difference in magnetization (DM FC-ZFC (T)) between FC and ZFC curves increases with decreasing t CoO at the lowest temperature (10 K), as shown with Figs.…”

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confidence: 99%

Modification of the ferromagnetic anisotropy and exchange bias field of NiFe/CoO/Co trilayers through the CoO spacer thicknesses

Lin

Lan

Shueh

et al. 2014

Journal of Applied Physics

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We have investigated the magnetism of NiFe/CoO/Co trilayers with different CoO spacer thicknesses. The dependence of the coercivity (H c) and exchange bias field (H ex) on the CoO thicknesses indicated that different pinning strengths from the CoO were acting on the top NiFe and bottom Co layers, respectively. DC susceptibility indicated the different interlayer coupling energies and showed that the anisotropy of CoO layer strongly affected the temperature dependence of the magnetization. V

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Using Ion-Beam-Assisted Deposition and Ion Implantation for the Rational Control of Nanomagnetism in Thin Film and Nanostructured Systems

Lin

Ouyang

Lierop

2018

Solid State Physics

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Unusual exchange bias effects induced in NiFe/Mn thin films via ion-beam bombardment: Superlattice vs. nanocomposite

Cited by 6 publications

References 17 publications

Structural and magnetic characterization of Mn/NiFe bilayers with ion-beam-assisted deposition

Structural and magnetic characterization of Mn/NiFe bilayers with ion-beam-assisted deposition

Modification of the ferromagnetic anisotropy and exchange bias field of NiFe/CoO/Co trilayers through the CoO spacer thicknesses

Using Ion-Beam-Assisted Deposition and Ion Implantation for the Rational Control of Nanomagnetism in Thin Film and Nanostructured Systems

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