Unusual gate coupling effect in extremely thin and short FDSOI MOSFETs

Chang, Sung‐Jae; Bawedin, M.; Andrieu, F.; Navarro, C.; Kim, Y.T.; Bae, Y-H.; Cristoloveanu, S.

doi:10.1016/j.mee.2015.04.054

Cited by 6 publications

(1 citation statement)

References 13 publications

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“…27,28) The sensitivity of the threshold voltage to temperature (≈0.52 mV=T), defined as ΔV TH =ΔT, is less in HEMT compared with the Si MOSFET. 29) This phenomenon can be an additional advantage for the HEMT device when the temperature of the device operation is varied.…”

Section: Resultsmentioning

confidence: 99%

Investigation of channel mobility in AlGaN/GaN high-electron-mobility transistors

Chang

Kang

Lee

et al. 2016

Jpn. J. Appl. Phys.

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We have investigated the channel mobility in the gated region of a set of high-quality AlGaN/GaN high-electron-mobility transistors (HEMTs). The resistances in the contact, access, and gated regions were extracted from straightforward I D(V G) measurements on sets of HEMTs with four different gate-to-drain distances. By correcting for the effects of the contact and access resistances, much more accurate effective mobility curves in the gated region, compared to those reported in the past, have been obtained. The maximum effective mobility in that region has been found to be 1100 cm2 V−1 s−1 at carrier density n s = 7 × 1012 cm−2 at room temperature. We have extracted the mobility curves in a wide range of temperatures (80 to 520 K) and carrier concentrations (up to 1.3 × 1013 cm−2). Our systematic measurements have revealed various dominant scattering mechanisms as the temperature and carrier concentration change.

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Section: Resultsmentioning

confidence: 99%