Unusual narrowing of the ESR line width in ordered structures with linear chains of Ge/Si quantum dots

Zinovieva, A. F.; Смагина, Ж. В.; Nenashev, A. V.; Кулик, Л. В.; Двуреченский, А. В.

doi:10.1134/s0021364015140131

Cited by 9 publications

(25 citation statements)

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“…[10] that in a Ge/Si nanosystem with germanium QDs in the integral of average QD radii (6.4 eV, which was observed under experimental conditions up to room temperature. [1][2][3]7] Let us assume that the distances D between the surfaces of the QDs will be the same in the entire linear chain of germanium QDs on the substrate of the silicon matrix. [3,7] As a result, of electron tunneling through the potential barrier U(x) (6)- (8), which separates QDs, the exciton states E ex ðaÞ are splitted, forming a zone of localized electron states in a linear germanium QD chain.…”

Section: Resultsmentioning

confidence: 99%

“…Such energies

ℏ ω_{e x} ({\bar{a}}_{1}) =

266 meV and

ℏ ω_{e x} ({\bar{a}}_{2}) =

258 meV were contained in the infrared spectral region (0.20–1.14) eV, which was observed under experimental conditions up to room temperature. [ 1–3,7 ]…”

Section: Resultsmentioning

confidence: 99%

“…Using electron beam lithography in refs. [3,7], linear germanium QD chains on silicon substrates were created. In the chains, the average QD radii of germanium did not exceed 30 nm.…”

Section: Introductionmentioning

confidence: 99%

“…It was found that in these nanostructures a photoluminescence signal in the infrared spectral region (0.20-1.14) eV was observed up to room temperature. [1][2][3][4][5][6][7] At low concentrations N QDs of germanium, when in linear chains, the average distance (%N À1/3 ) between the surfaces of the QD significantly exceeds the Bohr radius of the electron (a e ¼ 0.63 nm) in the silicon matrix, that is a e N 1=3 ( 1 (1) the interaction between QDs can be neglected. The optical properties of such nanosystems were mainly determined by the energy spectra of electrons and holes localized near the surface of single germanium QDs grown in a silicon matrix.…”

Section: Introductionmentioning

confidence: 99%

“…It was found that in these nanostructures a photoluminescence signal in the infrared spectral region (0.20–1.14) eV was observed up to room temperature. [ 1–7 ]…”

Section: Introductionmentioning

confidence: 99%

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The Splitting of Electron States in Ge/Si Heterostructure with Germanium Quantum Dots

Pokutnyi

2020

Physica Status Solidi (b)

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It is shown that electron tunneling through a potential barrier that separates two quantum dots (QDs) of germanium leads to the splitting of electron states localized over spherical interfaces (QD–silicon matrix). The dependence of the splitting values of the electron levels on the parameters of the nanosystem (the radius a of germanium QDs, as well as the distance D between the surfaces of the QDs) is obtained. It is shown that, the splitting of electron levels in the QD chain of germanium causes the appearance of a zone of localized electron states, which is located in the bandgap of silicon matrix. It is found that the motion of a charge‐transport exciton along a chain of QDs of germanium causes an increase in photoconductivity in the nanosystem.

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Section: Resultsmentioning

confidence: 99%

“…Such energies

ℏ ω_{e x} ({\bar{a}}_{1}) =

266 meV and

ℏ ω_{e x} ({\bar{a}}_{2}) =

258 meV were contained in the infrared spectral region (0.20–1.14) eV, which was observed under experimental conditions up to room temperature. [ 1–3,7 ]…”

Section: Resultsmentioning

confidence: 99%

“…Using electron beam lithography in refs. [3,7], linear germanium QD chains on silicon substrates were created. In the chains, the average QD radii of germanium did not exceed 30 nm.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…It was found that in these nanostructures a photoluminescence signal in the infrared spectral region (0.20–1.14) eV was observed up to room temperature. [ 1–7 ]…”

Section: Introductionmentioning

confidence: 99%

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