Unusual Operation of the Junction Transistor Based on Dynamical Behavior of Impurities

Abstract

The dynamical behavior of impurities into the silicon junction transistor has been studied using an empirical methodology to investigate its behavior knowing only the physical parameters of materials together with practical behavior of their passive components. The operating modes suggested with equations governing circuit performance are derived considering transient analysis. The relationship between material properties and equivalent circuit is discussed from a physical viewpoint. Theoretical solution of the equations yields a graphical response as approximation of the experimental results obtained from a proposed circuit built with an inductor and an NPN silicon MPSH10 transistor. Hence, the impurities-controlled electrical properties indicate that the observed unusual operation can be a good strategy to optimize signal processing in electronics.

Reconfiguration Using Bio-Inspired Conduction Mode of Field-Effect Transistors toward the Creation of Recyclable Devices

“…At f = 175 kHz, the saturation of the space-charge capacitance and high-level injection due to a constant electric field along the n-channel occurs at positive and zero square-wave pulses, resulting in a correspond-ingly higher number of neuron-like spikes during the transient diffusion phenomena. At f = 250 kHz, the velocity of the charge carried along the n-channel is higher than the velocity for the exchange of energy between the inductor and space-charge capacitance arising in the lowly doped p-region [25]; therefore, charge accumulation through this p-n + junction allows a delayed conduction, which obeys the well-known logic circuit performance [26].…”

“…where I F is the forward current; I R is the reverse saturation current; Φ is the built-in potential at the junction; k is the Boltzmann constant 8.82 × 10 −5 eVK −1 ; T is the temperature; and m = ln N * D N * A n −2 i is the factor determining ratio of the donor, N * D , acceptor, and N * A ionized impurities [24,25].…”