Unusual properties of the dominant acceptor in freestanding GaN

Reshchikov, M. A.; Park, S.S.; Lee, K.Y.; Morkoç̌, H.

doi:10.1016/j.physb.2003.09.026

Cited by 7 publications

(19 citation statements)

References 8 publications

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“…However, it is often difficult to resolve the GL band in steady-state PL spectra, because it usually overlaps with the YL band at room temperature and with the UV luminescence (UVL) band or BL band at low temperatures. In this paper, we extracted the shape of the GL band from time-resolved PL measurements, because in these experiments the GL band can be isolated due to its PL lifetime being significantly shorter than that for other defect-related PL bands [26]. Figure 4 shows the PL spectrum taken 1 μs after pulsed excitation at various temperatures.…”

Section: Shape Of the Gl Bandmentioning

confidence: 99%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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In high-purity GaN grown by hydride vapor phase epitaxy, the commonly observed yellow luminescence (YL) band gives way to a green luminescence (GL) band at high excitation intensity. We propose that the GL band with a maximum at 2.4 eV is caused by transitions of electrons from the conduction band to the 0/+ level of the isolated C N defect. The YL band, related to transitions via the −/0 level of the same defect, has a maximum at 2.1 eV and can be observed only for some high-purity samples. However, in less pure GaN samples, where no GL band is observed, another YL band with a maximum at 2.2 eV dominates the photoluminescence spectrum. The latter is attributed to the C N O N complex.

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Section: Shape Of the Gl Bandmentioning

confidence: 99%

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

et al. 2014

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“…3,4 Previously, we studied time-resolved PL from undoped n-type GaN and determined parameters of the defects responsible for the main PL bands in this material. [3][4][5][6] One of the well-studied bands is the blue luminescence (BL) band with a maximum at 2.9 eV. This band is attributed to the Zn Ga acceptor.…”

Section: Introductionmentioning

confidence: 99%

Time-resolved photoluminescence from defects in n-type GaN

Reshchikov¹

2014

Journal of Applied Physics

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Point defects in GaN were studied with time-resolved photoluminescence (PL). The effects of temperature and excitation intensity on defect-related PL have been investigated theoretically and experimentally. A phenomenological model, based on rate equations, explains the dependence of the PL intensity on excitation intensity, as well as the PL lifetime and its temperature dependence. We demonstrate that time-resolved PL measurements can be used to find the concentrations of free electrons and acceptors contributing to PL in n-type semiconductors. V

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“…(MBE) 4 , and metal-organic chemical vapor deposition (MOCVD) 5,6,7 to hydride vapor phase epitaxy (HVPE) 7,8,9 . In some samples, the YL is accompanied by a red luminescence (RL) 7,10 or a green luminescence (GL) 8,11 .…”

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confidence: 99%

“…There is experimental evidence that localization of holes is involved in YL. 6,18,9 Xu et al found that a GaN film with a shorter positron diffusion length exhibits stronger YL, and suggested that the extremely strong space localization effect of holes is the vital factor to enhance the YL efficiency. 6 Reshchikov attributed YL and GL bands in high-purity undoped GaN to an acceptor binding one and two holes, respectively.…”

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confidence: 99%

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Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

Xie

Sui

Buckeridge

et al. 2018

Applied Physics Letters

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Oxygen is the most common unintentional impurity found in GaN. We study the interaction between substitutional oxygen (ON) and the gallium vacancy (VGa) to form a point defect complex in GaN. The formation energy of the gallium vacancy is largely reduced in n-type GaN by complexing with oxygen, while thermodynamic and optical transition levels remain within the band gap. We study the spectroscopy of this complex using a hybrid quantum-mechanical molecular-mechanical (QM/MM) embedded-crystal approach. We reveal how a single defect center can be responsible for multiband luminescence, including the ubiquitous yellow luminescence signature observed in n-type GaN, owing to the coexistence of diffuse (extended) and compact (localized) holes.

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Unusual properties of the dominant acceptor in freestanding GaN

Cited by 7 publications

References 8 publications

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Carbon defects as sources of the green and yellow luminescence bands in undoped GaN

Time-resolved photoluminescence from defects in n-type GaN

Prediction of multiband luminescence due to the gallium vacancy–oxygen defect complex in GaN

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