Unusual Shubnikov–de Haas oscillations in BiTeCl

Abstract

We report measurements of Shubnikov-de Haas (SdH) oscillations in single crystals of BiTeCl at magnetic fields up to 31 T and at temperatures as low as 0.4 K. Two oscillation frequencies were resolved at the lowest temperatures, F 1 = 65 ± 4 Tesla and F 2 = 156 ± 5 Tesla. We also measured the infrared optical reflectance (R(ω)) and Hall effect; we propose that the two frequencies correspond respectively to the inner and outer Fermi sheets of the Rashba spin-split bulk conduction band. The bulk carrier concentration was ne ≈ 1 × 10 19 cm −3 and the effective masses m * 1 = 0.20m 0 for the inner and m * 2 = 0.27m 0 for the outer sheet. Surprisingly, despite its low effective mass, we found that the amplitude of F 2 is very rapidly suppressed with increasing temperature, being almost undetectable above T ≈ 4 K.

Quantum oscillations in Rashba semiconductor BiTeCl

“…The high-field quantum oscillation in Ref. [23] is consistent with our present conclusion on the absence of a 2D topological SS in BiTeCl bulk single crystals.…”

“…Recently, two papers have appeared which also report the SdH quantum oscillation in BiTeCl single crystals [23,24]. The high-field quantum oscillation in Ref.…”

Observation of topological transition of Fermi surface from a spindle torus to a torus in bulk Rashba spin-split BiTeCl

“…In this paper, by combining the Hall measurements, the Fermi surface tuning, and more extensive angledependent SdH measurements, we find that the oscillations originate from the bulk and that the previous observation of an SdH oscillation with a single frequency corresponds to the extremal case when the Fermi level is located in the vicinity of the Dirac point, where the oscillation from the IFS disappears. Recently we became aware of another two works which also conclude that SdH oscillations in BiTeCl originate from the bulk [36,37]. Our work is different from Refs.…”

“…Our work is different from Refs. [36] and [37], however, as we observe oscillations from both the IFS and the OFS in lower magnetic field, the topological transition of the FS by tuning the carrier density with the self-doping effect, and the nontrivial π Berry phase of both the IFS and OFS. Furthermore, we have used angle-dependent measurements to resolve the 3D Fermi surface.…”

Role of anisotropy and spin-orbit interaction in the optical and dielectric properties of BiTeI and BiTeCl compounds

“…Studying their optical and dielectric properties is of significant importance for the implementation of these com pounds. So far, such studies have largely been carried out in the low energy region of the electronic transi tions below 1-2 eV [16][17][18][19][20][21]. The electronic transi tions with higher energies are poorly studied.…”