“…Color centers based on Si (ZPL, at 738 nm) [36], Ge (602 nm) [37], Sn (620 nm) [38], and Pb (552 nm) [39] atoms share the same split-vacancy configuration and similar properties, such as a narrow emission line (Figure 2a), ~ns excited state lifetimes, Fourier-transform-limited emission, and an addressable ground-state splitting for quantum information processing [40][41][42][43]. Several additional emerging classes of interest are currently being explored in an attempt to map the optical activity of impurities incorporated in the diamond lattice, including the Mg-related-split-vacancy defects [23,44], the oxygen-related ST1 center [45], and noble gas impurities [46,47]. The main strength of these classes of color centers lies in their room-temperature operation, although there are unavoidable limitations in the degree of indistinguishability, and in their high photon emission rates (above 10 6 photons/s for several classes of defects [23,39,48]).…”