Upconversion luminescence of Er-implanted GaN films by focused-ion-beam direct write

Abstract

Upconversion luminescence has been obtained from Er-implanted GaN films by focused-ion-beam (FIB) direct write. FIB implantation was performed on GaN films grown by molecular beam epitaxy, hydride vapor phase epitaxy, and metalorganic chemical vapor deposition. After implantation, the GaN samples were annealed at 1100 °C for 1 h in various ambients (Ar, N2, and O2). Strong green upconversion was observed at 523 and 546 nm under red (840 nm) and infrared (1.0 μm) excitation. Upconversion intensity was measured for Er doses ranging from 4.3×1012 to 2.4×1016 atoms/cm2. Maximum upconversion intensity at 546 nm was observed at a dose of 1–2×1015 atoms/cm2, which corresponds to an atomic percentage of 0.3%–0.6%.

First-principles study of electronic structure and magnetism of cubic Al1−xErxN using the LSDA+U approach

“…Furthermore, photoluminescence in the visible has been observed in RE-doped GaN [6][7][8][9][10][11][12] and RE-doped AlN [13][14][15][16][17][18][19], which present an excellent opportunity for applications to full-color flat-panel displays [20][21][22]. An interesting aspect of these ions is the occurrence of localized strongly correlated 4e electrons, of which the treatment presents a challenge to band-structure theory.…”

Lattice location and optical activation of rare earth implanted GaN

“…Those who studied luminescence from samples implanted at varying doses [14,18,19,22,23,[49][50][51][52][53] generally found that implantations in the 1-5×10 15 cm −2 range gave stronger luminescence than lower doses. At higher fluences the inability to regrow a crystalline GaN layer from the amorphous state presents a limit.…”

“…While most studies before 1998 reported only results for the temperature range below 1000°C, newer work focuses increasingly on temperatures at 1100°C and above. Three papers have investigated whether the luminescence intensity of implanted GaN:Er depends on the type of starting material, and found no striking differences between MBE, HVPE or MOCVD GaN [20,22,36].…”

Application of mass-separated focused ion beams in nano-technology

“…Especially, in order to use the advantages of the FIB, in terms of the high lateral resolution, the flexibility in fluence and pattern design for direct doping purposes, one needs different ion sources to produce the wealth of technologically interesting ions. As an example B + , As + or P + for Si-doping [11] or rare earth elements like Er + , Pr + and Nd + for opto-electronic applications [12] metals, like Au + for plasmonic structures [13] or Fe + , Co + and Ni + for selective changes of magnetic properties [14] should be mentioned. To operate LMISs with such source materials is in most cases difficult, due to the high melting points of the pure materials.…”