Excitonic devices operate based on excitons, which can
be excited
by photons as well as emitting photons and serve as a medium for photon-carrier
conversion. Excitonic devices are expected to combine the advantages
of both the high response rate of photonic devices and the high integration
of electronic devices simultaneously. However, because of the neutral
feature, exciton transport is generally achieved via diffusion rather
than using electric fields, and the efficient control of exciton flux
directionality has always been difficult. In this work, a precisely
designed one-dimensional periodic nanostructure (1DPS) is used to
introduce periodic strain field along with resonant mode to the WS2 monolayer, achieving exciton oriented diffusion with a 7.6-fold
exciton diffusion coefficient enhancement relative to that of intrinsic,
while enhancing the excitonic emission intensity by a factor of 10
and reducing exciton saturation threshold power by 2 orders of magnitude.
Based on the analysis of the density functional theory (DFT) and the
finite-element method (FEM), we attribute the anisotropy of exciton
diffusion to exciton funneling induced by periodic potentials, which
do not require excessive potential height difference for an efficient
oriented diffusion. As a result of resonant emission, the exciton
diffusion is dragged into the nonlinear regime owing to the high exciton
density close to saturation, which improves the exciton diffusion
coefficient and diffusion anisotropy more appreciably.