Upgrading Electroresistive Memory from Binary to Ternary Through Single‐Atom Substitution in the Molecular Design

Cheng, Xue‐Feng; Shi, Erbo; Hou, Xianghui; Xia, Shugang; He, Jinghui; Xu, Qingfeng; Li, Hua; Li, Najun; Chen, Dongyun; Lu, Jianmei

doi:10.1002/asia.201601317

Cited by 21 publications

(13 citation statements)

References 49 publications

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“…Briefly, a charge in the organic film will polarize the surrounding molecules due to the small dielectric coefficient of organic materials. The surrounding will beome more conductive, which in turn allows more charge to be injected in a positive feedback effect . This finally creates a conductive channel and causes an abrupt switch in resistance.…”

Section: Resultsmentioning

confidence: 99%

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

Hou

Cheng

Xiao

et al. 2017

Chemistry An Asian Journal

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Organic multilevel random resistive access memory (RRAM) devices with an electrode/organic layer/electrode sandwich-like structure suffer from poor reproducibility, such as low effective ternary device yields and a wide threshold voltage distribution, and improvements through organic material renovation are rather limited. In contrast, engineering of the electrode surfaces rather than molecule design has been demonstrated to boost the performance of organic electronics effectively. Herein, we introduce surface engineering into organic multilevel RRAMs to enhance their ternary memory performance. A new asymmetric conjugated molecule composed of phenothiazine and malononitrile with a side chain (PTZ-PTZO-CN) was fabricated in an indium tin oxide (ITO)/PTZ-PTZO-CN/Al sandwich-like memory device. Modification of the ITO substrate with a phosphonic acid (PA) prior to device fabrication increased the ternary device yield (the ratio of effective ternary device) and narrowed the threshold voltage distribution. The crystallinity analysis revealed that PTZ-PTZO-CN grown on untreated ITO crystallized into two phases. After the surface engineering of ITO, this crystalline ambiguity was eliminated and a sole crystal phase was obtained that was the same as in the powder state. The unified crystal structure and improved grain mosaicity resulted in a lower threshold voltage and, therefore, a higher ternary device yield. Our result demonstrated that PA modification also improved the memory performance of an asymmetric conjugated molecule with a side chain.

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Section: Resultsmentioning

confidence: 99%

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

Hou

Cheng

Xiao

et al. 2017

Chemistry An Asian Journal

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“…Significant progress has been witnessed in the synthesis of inorganic ferroelectric materials and their applications. − As an organic and plastic counterpart, molecular ferroelectrics have shown prominent physical properties, , such as diisopropylammonium bromide with a spontaneous polarization of 23 μC cm –2 at room temperature and trimethylchloromethylammonium trichloromanganese(II) with a large piezoelectric coefficient d 33 of 185 pC N –1 as well as a high phase-transition temperature of 406 K. , In this study, we report solution-processed molecular ferroelectric ( R )-(−)-3-hydroxyquinuclidinium chloride thin films, shedding light on its electro-optical and electroresistive properties. ( R )-(−)-3-Hydroxyquinuclidinium chloride has a spontaneous polarization of 2.4 μC cm –2 with a Curie temperature of 340 K and a low coercive field of 1 MV cm –1 .…”

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confidence: 92%

Chiral Molecular Ferroelectrics with Polarized Optical Effect and Electroresistive Switching

Gao

Zhang

et al. 2017

ACS Nano

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Multifunctional properties of chiral molecules arise from the coexistence of mirror-symmetry-induced stereoisomers and optical rotation characteristics in one material. One of these complex phenomena in these molecules is chiral ferroelectricity, providing the coupling between polarized light and the spatial asymmetry induced dipole moment. Herein we describe the chiral polarization and electroresistance in molecular ferroelectric (R)-(-)-3-hydroxyquinuclidinium chloride thin films with a Curie temperature of 340 K. The high transmittance of chiral ferroelectrics is coupled with polarized light for a linear electro-optic effect, which exhibits angle-dependent optical behaviors. The polarization-controlled conductance imposes a large on/off ratio (∼26.6) of electroresistive switching in molecular ferroelectrics with superior antifatigue endurance.

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“…However, to what extent the two charge traps should differ to obtain ternary performance still remains unclear. In some studies, different electron-withdrawing groups were chosen blindly [13,14,15,16,17], leading to devices based on the designed molecule with two different electron-drawing groups that could not exhibit ternary memory behavior. Therefore, a rational way to build an innovative configuration to achieve a multilevel organic storage device is crucial.…”

Section: Introductionmentioning

confidence: 99%

Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

2019

Nanomaterials

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A tristable memory device with a trilayer structure utilizes poly(methyl methacrylate) (PMMA) sandwiched between double-stacked novel nanocomposite films that consist of 2-(4-tert-butylphenyl)-5-(4-biphenylyl)-1,3,4-oxadiazole (PBD) doped with graphene oxide (GO). We successfully fabricated devices consisting of single and double GO@PBD nanocomposite films embedded in polymer layers. These devices had binary and ternary nonvolatile resistive switching behaviors, respectively. Binary memristic behaviors were observed for the device with a single GO@PBD nanocomposite film, while ternary behaviors were observed for the device with the double GO@PBD nanocomposite films. The heterostructure GO@PBD/PMMA/GO@PBD demonstrated ternary charge transport on the basis of I–V fitting curves and energy-band diagrams. Tristable memory properties could be enhanced by this novel trilayer structure. These results show that the novel graphene-based memory devices with trilayer structure can be applied to memristic devices. Charge trap materials with this innovative architecture for memristic devices offer a novel design scheme for multi-bit data storage.

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Upgrading Electroresistive Memory from Binary to Ternary Through Single‐Atom Substitution in the Molecular Design

Cited by 21 publications

References 49 publications

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

Surface Engineering of ITO Substrates to Improve the Memory Performance of an Asymmetric Conjugated Molecule with a Side Chain

Chiral Molecular Ferroelectrics with Polarized Optical Effect and Electroresistive Switching

Ternary Memristic Effect of Trilayer-Structured Graphene-Based Memory Devices

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