2016
DOI: 10.1134/s1063783416020311
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Upper critical field of niobium nitride thin films

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Cited by 7 publications
(2 citation statements)
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“…From the upper critical fields measured for film grown at optimal conditions (Fig. 4), the extrapolated perpendicular critical field was determined to be H c2 (0) = 319 kOe and the estimated coherence length is ξ(0) = 3.2 nm, slightly smaller than the bulk value of 5 nm reported in literature [27,28]. This reduced value of ξ(0) is the result of the renormalization of coherence length due to short electron mean-free path in disordered sputtered films.…”
Section: A Characterization Of Thick Nbn Filmsmentioning
confidence: 77%
“…From the upper critical fields measured for film grown at optimal conditions (Fig. 4), the extrapolated perpendicular critical field was determined to be H c2 (0) = 319 kOe and the estimated coherence length is ξ(0) = 3.2 nm, slightly smaller than the bulk value of 5 nm reported in literature [27,28]. This reduced value of ξ(0) is the result of the renormalization of coherence length due to short electron mean-free path in disordered sputtered films.…”
Section: A Characterization Of Thick Nbn Filmsmentioning
confidence: 77%
“…Superconducting NbN material is of considerable interest for various kinds of applications. The upper critical field of this material can exceed 50 T and the transition temperature T c is above 15 K. [1][2][3] Over the past fifteen years, meander nanowires made from ultra-thin films show great potential for single photon detections. [4][5][6] The devices are normally current biased and operate in the region very close to superconductingresistive transition.…”
Section: Introductionmentioning
confidence: 99%