2019
DOI: 10.1587/elex.16.20190498
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Upset and damage mechanisms of the three-dimensional silicon device induced by high power microwave interference

Abstract: The paper clearly reveals the mechanism of upset (bit error) and damage caused by high power microwave (HPM) interference for the three-dimensional silicon device. The 0.35 µm process related three-dimensional model of two stages cascaded CMOS inverters is established for the first time utilizing semiconductor device simulator Sentaurus-TCAD to comprehendingly study the HPM interference mechanism. Moreover, a detailed mechanism about the upset induced by HPM interference is performed. Furthermore, the process … Show more

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Cited by 7 publications
(4 citation statements)
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References 29 publications
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“…If the peak burr of the output signal changes greatly, it may cause the output to flip. To meet the design requirements for chip testability, a test interface can be added at the output of the inverter to detect if ESD can cause bit errors in the digital circuit [ 25 , 26 ].…”
Section: Simulation and Results Discussmentioning
confidence: 99%
See 1 more Smart Citation
“…If the peak burr of the output signal changes greatly, it may cause the output to flip. To meet the design requirements for chip testability, a test interface can be added at the output of the inverter to detect if ESD can cause bit errors in the digital circuit [ 25 , 26 ].…”
Section: Simulation and Results Discussmentioning
confidence: 99%
“…And it is a product of Fairchild Semiconductor, a Texas company. Figure 9 shows the TLP pulse effect experimental injection platform, mainly including [ 25 , 26 ]: E3649A DC source used to supply power to the device under test (DUT); System PC used to complete TLP pulse parameter setting, data storage, and other operations; A TLP pulse generator module for generating the required TLP pulse signal and a small signal to detect leakage current; The peak injection pulse collected by the TDS3054C oscilloscope; The MDO3102 oscilloscope is used to record the response voltage waveform at the output port of DUT monitoring. …”
Section: Tlp Experiments and Results Analysismentioning
confidence: 99%
“…When viewed as an illusion of power density, it is included in the level of 60 -300 mW/cm 2 . This can lead to malfunction and damage to electronic devices [13], [50]. However, the distance is in the range of 1 -2 km, and it is estimated that the effective distance and effectiveness of the electromagnetic waves are reduced by 1/4 when compared to the case where the protection system is not installed.…”
Section: Discussionmentioning
confidence: 99%
“…Besides, the avalanche model accounting for impact ionization, the analytic-TEP model for thermal electric power, and the high-field-saturation model for electron mobility are also used in this model. [18] The description and physical equation for each of these models are available in Ref. [17].…”
Section: Numerical Modelmentioning
confidence: 99%