Metrology, Inspection, and Process Control for Microlithography XXIII 2009
DOI: 10.1117/12.816370
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Use of 3D metrology for process control

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“…For the increasingly complex optimization of the semiconductor manufacturing processes it is necessary not only to determine a single parameter, such as a linewidth, but additional information such as edge angles, line edge roughness and other topography details [79,80]. For example, the ITRS roadmap [77] requires for the 32 nm half pitch node in 2011 a CD metrology tool uncertainty for isolated lines of 0.48 nm (for EUV reflection lithography) and of 0.30 nm (for 193 nm transmission lithography double patterning).…”
Section: Electrical Nanometrologymentioning
confidence: 99%
“…For the increasingly complex optimization of the semiconductor manufacturing processes it is necessary not only to determine a single parameter, such as a linewidth, but additional information such as edge angles, line edge roughness and other topography details [79,80]. For example, the ITRS roadmap [77] requires for the 32 nm half pitch node in 2011 a CD metrology tool uncertainty for isolated lines of 0.48 nm (for EUV reflection lithography) and of 0.30 nm (for 193 nm transmission lithography double patterning).…”
Section: Electrical Nanometrologymentioning
confidence: 99%