Use of a-SiC:H Photodiodes in Optical Communications Applications

Louro, Paula; Vieira, Manuela; Fernandes, M.; Costa, João

doi:10.5772/14048

Cited by 6 publications

(3 citation statements)

References 14 publications

(10 reference statements)

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“…This alloy (in thin film form) shows to be promising as both, etch stop [1,2] and hard mask layer [3] to assist nanoelectronic patterning, and as low dielectric constant (known as low-k) interfacial dielectric material [4], diffusion barrier [S-7], and pore sealants [8]. Optoelectronic applications as another important area include the use of a-SiC photodiodes in optical communications [9], optical/image sensors [10] and LED's applications [11].…”

Section: Introductionmentioning

confidence: 99%

Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD

Vary

Huran

Perny

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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The heterojunction structure which consists of amorphous SiC layer deposited on p-type silicon substrate was prepared at various substrate temperatures and studied to optimize the technology and improve the quality of the interface. Rutherford Backscattering Spectroscopy (RBS) and ElasticRecoil Detection (ERD) structural analysis was employed in determination the concentrations of elements. Current-voltage (I V) measurements were processed in order to obtained basic electric and PV parameters of prepared samples. Biased impedance spectra of AIJa-SiC/c-Si(p)/AI heterojunction in the dark are reported and analyzed. AC measurements in the dark conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting of measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.

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Section: Introductionmentioning

confidence: 99%

Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD

Vary

Huran

Perny

et al. 2014

2014 IEEE 40th Photovoltaic Specialist Conference (PVSC)

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“…These devices have one surface over which the optical signal shines. On our device, a multilayered Si/C heterostructure [1,2], light can shine on the two surfaces, namely back and front. This device acts as an optical filter when other fixed wavelengths superimpose the incident light data signal on the surface it shines with.…”

Section: Introductionmentioning

confidence: 99%

Optoelectronic Digital Capture Device Based on Si/C Multilayer Heterostructures

Silva

Louro

Vieira

et al. 2013

IFIP Advances in Information and Communication Technology

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Combined tunable WDM converters based on SiC multilayer photonic active filters are analyzed. The operation combines the properties of active long-pass and short-pass wavelength filter sections into a capacitive active band-pass filter. The sensor element is a multilayered heterostructure produced by PE-CVD. The configuration includes two stacked SiC p-i-n structures sandwiched between two transparent contacts. Transfer function characteristics are studied both theoretically and experimentally. Results show that optical bias activated photonic device combines the demultiplexing operation with the simultaneous photodetection and self amplification of an optical signal acting the device as an integrated photonic filter in the visible range. Depending on the wavelength of the external background and irradiation side, the device acts either as a short-or a long-pass band filter or as a bandstop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels. A numerical simulation and two building-blocks active circuit is presented and gives insight into the physics of the device.

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“…Controllability of the band gap allows a wide range of applications especially in microelectronics, including thin dielectric layers and semiconductor applications. Optoelectronic applications as another important area include the use of a-SiC photodiodes in optical communications [17], optical/image sensors [18] and LED's applications [19]. Another field of applications a-SiC has found in micro electromechanical systems [20].…”

Section: Introductionmentioning

confidence: 99%

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

Perny

Šály

Vary

et al. 2014

Journal of Electrical Engineering

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The amorphous silicon carbide/crystalline silicon heterojunction was prepared and analyzed. The current-voltage (I − V ) measurements showed the barrier properties of prepared sample. Biased impedance spectra of Al/a-SiC/c-Si(p)/Al heterojunction under the standard illumination are reported and analyzed. AC measurements in the illuminated conditions were processed in order to identify electronic behavior using equivalent AC circuit which was suggested and obtained by fitting the measured impedance data. A phenomenon of negative capacitance/resistance in certain frequency range has been observed.

show abstract

Use of a-SiC:H Photodiodes in Optical Communications Applications

Cited by 6 publications

References 14 publications

Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD

Study of Al/a-SiC/c-Si(p)/Al structure prepared by PECVD

Optoelectronic Digital Capture Device Based on Si/C Multilayer Heterostructures

Ac Impedance Spectroscopy Of Al/A-Sic/C–Si(P)/Al Heterostructure under Illumination

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