Use of a YAG:Ne³⁺laser in distance measurement by a dispersion method

Abstract

In this paper we present an extended transport model that has been specifically derived to account for the silicon thickness dependence of low-field electron mobility as observed in ultra-thin silicon-on-insulator MOS transistors, operating both in single-and double-gate modes. The systematic comparison with available experimental data suggests that conventional models for bulk transistors are inadequate to quantitatively describe the peculiarities of electron transport in such devices. The role of bulk phonons, surface roughness and Coulomb scattering is analysed, together with that of surface optical phonons and of the space, low-frequency fluctuations of the silicon thickness of such devices. Simulation results show that the inclusion of the last two scattering mechanisms significantly improves the comparison with available experimental data.