Use of commercial VDMOSFETs in electronic systems subjected to radiation

Picard, C.; Brisset, C.; Quittard, O.; Marceau, M.; Hoffmann, A.; Joffre, F.; Charles, J.-P.

doi:10.1109/radecs.1999.858604

Cited by 2 publications

(4 citation statements)

References 8 publications

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“…This might be in conjunction with diffusion of some neutral species -hydrogen molecules from the position of high concentration (oxide) toward lower concentration (interface). Threshold voltage shift almost linearly decreases with log(t), which is in agreement with comparable published results [9] (power MOS, 105 nm gate oxide, annealed at 175 • C), and also agrees with the switching-oxide trap model used originally as the so-called HDL model in interpreting irradiation effects [46], [47] and later in NBTI phenomena [34], [48]- [50].…”

Section: Resultssupporting

confidence: 91%

“…The obtained results are in excellent agreement with the results of the low-dose bias irradiation experiment (up to 150 Gy at ±9 V) by Johnson et al, performed on power p-channel DMOS devices at cryogenic temperatures [6]. It should be mentioned, however, that a significant difference in radiation response between commercial power VDMOSFETs biased with +10 V and −10 V gate voltage during the Co-60 irradiation was observed at extremely high doses (−40 V threshold voltage shift has been achieved at 7.8 Mrad) [9]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The total received dose (75 Gy) can be considered easily achievable in satellite missions [29] and is relatively low compared to the very high doses, up to 1 Mrad (10 kGy) or even more, used by a number of other researchers in their irradiation experiments [9], [10], [28], [30], [35]- [38]. Actually, a decision to irradiate devices up to a 75 Gy dose level in the current study was based on our previous irradiation experiments with power MOSFETs [5], [7], in order to avoid that irradiation-induced device degradation significantly surpasses and, thus, masks the NBT stress-induced device degradation.…”

Section: Methodsmentioning

confidence: 99%

See 2 more Smart Citations

NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

Davidović

Danković

Ilić

et al. 2016

IEEE Trans. Nucl. Sci.

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In this paper, we report the results of consecutive irradiation and negative bias temperature (NBT) stress experiments performed on p-channel power vertical double-diffused metal-oxide semiconductor transistors. The purpose is to examine the effects of a specific kind of stress in devices previously subjected to the other kind of stress, as well as to assess if possible the behavior of devices subjected to simultaneous irradiation and NBT stressing. It is shown that irradiation of previously NBT stressed devices leads to a further increase of negative threshold voltage shift due to additional build-up of both oxide trapped charge and interface traps. NBT stress effects in previously irradiated devices may, however, depend on gate bias applied during irradiation and on the total dose received: in the cases of low-dose irradiation or irradiation without gate bias, the subsequent NBT stress seems to lead to further device degradation, whereas in the cases of devices previously irradiated to high doses or with gate bias applied during irradiation, NBT stress seems to have a positive role since it practically anneals a part of radiation-induced degradation.Index Terms-Interface traps, irradiation effects, negative bias temperature instability (NBTI), oxide traps, power devices, thermal annealing, threshold voltage shift, VDMOSFET.

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Section: Resultssupporting

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

NBTI and Irradiation Effects in P-Channel Power VDMOS Transistors

Davidović

Danković

Ilić

et al. 2016

IEEE Trans. Nucl. Sci.

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show abstract

“…The method that consists of annealing MOSFEiTs at a temperature higher than room temperature enables acceleration of recovery phenomena [5][6] [7]. This also means much faster achievement of a stable condition than would be possible at room temperature, a phenomenon also observed in the present study, particularly for positive biases.…”

Section: Discussionmentioning

confidence: 51%