1991
DOI: 10.1117/12.44439
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Use of diffracted light from latent images to improve lithography control

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Cited by 7 publications
(3 citation statements)
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“…'nor =( 'mes'flofl R0 I R )/(1 R0 I R) ( 1) As the development proceeded, the 'mes decreased. When the 'mes was less than the previous determined 'stop' the control signal was sent from the computer to development unit.…”
Section: Methodsmentioning
confidence: 98%
“…'nor =( 'mes'flofl R0 I R )/(1 R0 I R) ( 1) As the development proceeded, the 'mes decreased. When the 'mes was less than the previous determined 'stop' the control signal was sent from the computer to development unit.…”
Section: Methodsmentioning
confidence: 98%
“…In addition, the exposure dose should account for wafer-to-wafer variation in photoresist thickness and stability of the intensity of the incident beams. Fortunately, the so-called latent image is produced in exposed, undeveloped photoresist, and a relationship exists between the intensity of light diffracted from a latent image and the amount of energy which is absorbed by the photoresist [5][6]. Thus, the latent image monitoring (LIM) are utilized to improve the control of the exposure process instead of conventional methods that the optimal conditions is attained by exposing large numbers of wafers ahead of product wafers.…”
Section: Exposure End Point Detectionmentioning
confidence: 98%
“…Several researchers have proposed diffraction intensity measurements to characterize and optimize the latent image formed in photoresist during exposure as a result of the refractive-index modulation experienced by the resist due to illumination (e.g., Refs. 2, [6][7][8]. However, as pointed out by Li et al,9 monitoring and control during the development process is more effective, since the development step occurs later and control of that step can correct for process variations in exposure and other prior steps.…”
Section: Introductionmentioning
confidence: 93%