Use of Electrochemical Etching to Produce Doped Phenylacetylene Functionalized Particles and Their Thermal Stability

Ashby, Shane P.; Chao, Yimin

doi:10.1007/s11664-013-2935-y

Cited by 7 publications

(3 citation statements)

References 31 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…56 It is also possible to use FTIR to show the compensation of carriers with varied concentrations of phosphorus and boron when codoped. 45 FTIR has also been used to determine if phenylacetylene ligands were situated on the surface of a set of NCs, 89 and in a similar manner to prove that NH 3 or NO 2 gases were adsorbed onto the NCs. 70,90 FT-IR has also been used to investigate the hypervalent surface interactions in Cl terminated Si NCs.…”

Section: Spectroscopic Methodsmentioning

confidence: 99%

“…For example, Si NCs were prepared through electrochemically etching and then functionalized with phenylacetylene (PA). 89 As an alternative, NCs may be treated with gas which, through adsorption, acts as a dopant; the pressure of the gas controls the amount of gas adsorbed to the particle surface. 70,90 Dopant concentrations were determined to be 10 18 cm −3 for NH 3 and 10 19 cm −3 for NO 2 gases.…”

Section: Doping Post Synthesismentioning

confidence: 99%

See 1 more Smart Citation

Doping silicon nanocrystals and quantum dots

2016

View full text Add to dashboard Cite

The ability to incorporate a dopant element into silicon nanocrystals (NC) and quantum dots (QD) is one of the key technical challenges for the use of these materials in a number of optoelectronic applications. Unlike doping of traditional bulk semiconductor materials, the location of the doping element can be either within the crystal lattice (c-doping), on the surface (s-doping) or within the surrounding matrix (m-doping). A review of the various synthetic strategies for doping silicon NCs and QDs is presented, concentrating on the efficacy of the synthetic routes, both in situ and post synthesis, with regard to the structural location of the dopant and the doping level. Methods that have been applied to the characterization of doped NCs and QDs are summarized with regard to the information that is obtained, in particular to provide researchers with a guide to the suitable techniques for determining dopant concentration and location, as well as electronic and photonic effectiveness of the dopant.

show abstract

Section: Spectroscopic Methodsmentioning

confidence: 99%

Section: Doping Post Synthesismentioning

confidence: 99%

Doping silicon nanocrystals and quantum dots

2016

View full text Add to dashboard Cite

show abstract

“…62 Additionally, because the narrow particle size distributions of the intrinsic SiQDs are already accessible using well-established procedures, it is reasonable that these approaches will provide control over the dimensions of the resulting doped particles. 4,32 Important progress has been realized in post-synthesis doping of a variety of Si nanostructures (e.g., porous Si, 63,64 oxide-embedded SiQDs, [65][66][67][68] Si nanowires 69 ) that provides a valuable basis for doping in SiQDs. To date, post-synthesis doping of freestanding SiQDs has only been reported using ligand substitution.…”

Section: Introductionmentioning

confidence: 99%

Post-Synthesis Boron Doping of Silicon Quantum Dots via Hydrosilsesquioxane-Capped Thermal Diffusion

Milliken

Cheong

Cui

et al. 2022

Preprint

View full text Add to dashboard Cite

Doped silicon quantum dots (SiQDs) with defined dopant distribution, size, and surface chemistry are highly sought-after as a scientific curiosity because their unique properties offer a wide array of potential applications including multi-modal medical imaging and photovoltaic devices. This report describes a diffusion based post-synthesis doping method for incorporating high concentrations of B (2.5 – 5.0 atomic %) into pre-formed SiQDs of predefined sizes while simultaneously maintaining their structure and morphology. The processing temperature, atmosphere, and QD size all strongly influence the resulting B-doped SiQDs. The as-synthesized doped SiQDs exhibit size-dependent photoluminescence spanning the visible to near-infrared spectral regions, are compatible with aqueous environments and are readily rendered compatible with organic solvents upon functionalization with appropriate alkoxide surface groups.

show abstract

Porous Silicon and Thermoelectrics

Chao¹

2016

Handbook of Porous Silicon

View full text Add to dashboard Cite

The motivation for, and performance of, silicon nanostructures including porous silicon in thermoelectrics is reviewed. A high thermoelectric figure of merit ZT ~1 has been achieved with a single silicon nanowire and ZT ~0.5 for a porous nanowire array. Very high Seebeck coefficients (3.2 mVK−1) have been achieved in compressed nanoparticles. Data is also presented relevant to two key factors limiting performance in bulk powders. The original size of silicon particles has a significant effect on the thermal conductivities of densified pellets. The intrinsic low electric conductivity can be improved by doping either nanocrystals or surface conductive ligands

show abstract

Use of Electrochemical Etching to Produce Doped Phenylacetylene Functionalized Particles and Their Thermal Stability

Cited by 7 publications

References 31 publications

Doping silicon nanocrystals and quantum dots

Doping silicon nanocrystals and quantum dots

Post-Synthesis Boron Doping of Silicon Quantum Dots via Hydrosilsesquioxane-Capped Thermal Diffusion

Porous Silicon and Thermoelectrics

Contact Info

Product

Resources

About