Use of FRAM Memories in Spacecrafts

Academy transaction note characterization of FRAM microcontrollers to radiations

“…In a LEO the damages produced by radiation can be divided in two macro categories: the TID and the SEE [1] that involves malfunctions on the electronics on-board such as MOSFET, parasitic elements and memories. Performing several simulations on SPENVIS [4], the radiation environment can be obtained.…”

“…Transiting cosmic rays of galactic and solar origin and their interaction with the Earth's magnetic field limit system endurance and reliability. Transient effects from individual high-energy protons or heavy ions can in fact disrupt system operation irreversibly causing system faults that can be very dangerous [1]. To test radiation effects on COTS Ferroelectric Random Access Memory (FRAM) microcontrollers we developed a payload tile for the AraMiS-C1 structure (modular architecture for small satellites, developed by Politecnico di Torino) [2].…”

Molecular-dynamics simulation of threshold displacement energies in BaTiO3

“…The BaTiO 3 is of great importance in producing ferroelectric memories. These ferroelectric memories possess high radiation resistance [5], which makes them especially suitable for applications in aeronautic and astronautic engineering [6]. With the trend of decreasing size of electronic devices, there is increased interest on the response of these devices in a radiation environment.…”