“…ICP optical emission spectrometry [ 15 , 16 , 17 , 18 , 19 ], AAS atomic absorption spectrometry [ 20 , 21 , 22 , 23 , 24 , 25 ], X-ray XRF and fluorescence [ 26 ] are increasingly widely used to determine silicon in various materials. The ICP-OES or ICP-AES technique (the same technique; different abbreviations are given by the authors) measurement parameters include the selection of the analytical line, selection of plasma observation conditions, gas flow rate, radio frequency generator power, photomultiplier voltage, integration time and the amount of sample to be administered.…”