1997
DOI: 10.1007/s002160050174
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Use of microwave plasma torch atomic emission spectrometry for the determination of silicon

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Cited by 15 publications
(2 citation statements)
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“…ICP optical emission spectrometry [ 15 , 16 , 17 , 18 , 19 ], AAS atomic absorption spectrometry [ 20 , 21 , 22 , 23 , 24 , 25 ], X-ray XRF and fluorescence [ 26 ] are increasingly widely used to determine silicon in various materials. The ICP-OES or ICP-AES technique (the same technique; different abbreviations are given by the authors) measurement parameters include the selection of the analytical line, selection of plasma observation conditions, gas flow rate, radio frequency generator power, photomultiplier voltage, integration time and the amount of sample to be administered.…”
Section: Introductionmentioning
confidence: 99%
“…ICP optical emission spectrometry [ 15 , 16 , 17 , 18 , 19 ], AAS atomic absorption spectrometry [ 20 , 21 , 22 , 23 , 24 , 25 ], X-ray XRF and fluorescence [ 26 ] are increasingly widely used to determine silicon in various materials. The ICP-OES or ICP-AES technique (the same technique; different abbreviations are given by the authors) measurement parameters include the selection of the analytical line, selection of plasma observation conditions, gas flow rate, radio frequency generator power, photomultiplier voltage, integration time and the amount of sample to be administered.…”
Section: Introductionmentioning
confidence: 99%
“…Kamson and Townshend 7 and Marshall and Van Staden 8 used this technique to eliminate the matrix effects in the determination of calcium and selenium, and arsenic, respectively. Liang et al 9 used this technique to eliminate some concomitant cations in the determination of silicon.…”
mentioning
confidence: 99%