2022
DOI: 10.3390/electronics11020253
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Use of Optical Emission Spectroscopy Data for Fault Detection of Mass Flow Controller in Plasma Etch Equipment

Abstract: To minimize wafer yield losses by misprocessing during semiconductor manufacturing, faster and more accurate fault detection during the plasma process are desired to increase production yields. Process faults can be caused by abnormal equipment conditions, and the performance drifts of the parts or components of complicated semiconductor fabrication equipment are some of the most unnoticed factors that eventually change the plasma conditions. In this work, we propose improved stability and accuracy of process … Show more

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Cited by 13 publications
(7 citation statements)
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“…Therefore, the representative wavelength signal of each element should be selected to analyze the collected OES data. Figure 3 shows the various signals of argon and oxygen in the entire wavelength range, and the two elements are the gases used in this experiment 9,10,11 .…”
Section: Resultsmentioning
confidence: 99%
“…Therefore, the representative wavelength signal of each element should be selected to analyze the collected OES data. Figure 3 shows the various signals of argon and oxygen in the entire wavelength range, and the two elements are the gases used in this experiment 9,10,11 .…”
Section: Resultsmentioning
confidence: 99%
“…Abnormal equipment conditions were detected using the extended isolation forest approach to demonstrate the ICP of SF 6 , O 2 , and Ar mixtures. 307) A non-invasive in situ plasma monitoring sensor was installed in the main chamber with a small chamber to generate self-plasma OES to show the chemical species residing inside the chamber. 308,309) It has been reported that the end-point detection technique is improved by the CNN-based classifier as compared with the third-order SVM and adaptive boosting (Adaboost) ensemble classifiers.…”
Section: Fault Detection and Classificationmentioning
confidence: 99%
“…It is well known that faster and more accurate fault detection during the plasma process is quite important to minimize wafer production loss by misprocessing during semiconductor manufacturing. In Reference [3], the authors proposed a new method for achieving more accurate process fault detection from optical emission spectroscopy (OES) data. In the study, under a controlled experimental setup of arbitrarily induced fault scenarios, the extended isolation forest was applied to detect the anomalies in the OES data.…”
Section: The Present Issuementioning
confidence: 99%