Use of optical metrology for wafer level packaging of CMOS image sensor

Cunff, Delphine Le; Pravdivtsev, Alexander; Chao, Kai-Yuan; Couvrat, S.; Euvrard, C.; Deloffre, E.; Căilean, Alin-Mihai

doi:10.1109/3dic.2010.5751473

Cited by 2 publications

(1 citation statement)

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“…For the case of multistacked structures, the resulting diagram will present several peaks corresponding to each interface. The thickness of the individual layers can be calculated from the distance between the two peaks divided by the layer's material refractive index [5].…”

Section: Optical Metrology Techniquesmentioning

confidence: 99%

Control of 3D IC process steps by optical metrologies

Fresquet¹,

Cunff

Raymond³

et al. 2015

International Symposium on Microelectronics

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This paper evaluates various optical metrology techniques for in-line control of the uniformity of 3D stacked structures. Advanced packaging technologies are rapidly evolving and 3D architectures require very well controlled process steps. Optical metrology techniques are now used for TSV but also for interconnect processing. In engineering mode, at the process implementation step, these techniques must be evaluated and then used to get uniform and repeatable processes. Among the 3D TSV Via middle process flow, the temporary bonding, wafer thinning and TSV reveal are key 3D process steps to get a uniform backside copper nail signature. High aspect ratio TSV are etched in Front End of the line and deep reactive ion etching systems generates radial non uniformities signatures. The wafer backside processing challenge consists in compensating this issue among the entire wafer surface. In this paper, all these process steps were characterized in order to quantify their specific intra-wafer dispersion signature .of the related key parameters. Cross correlation between the various intra-wafer process step signatures was then analyzed to verify the data set consistency and several process parameters analyzed to get a simple model. This model was then used to get a very uniform copper nail signature. For small diameter TSV and corresponding copper nails, a comparison has been done between full field OCT and confocal chromatic techniques.

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Section: Optical Metrology Techniquesmentioning

confidence: 99%

Control of 3D IC process steps by optical metrologies

Fresquet¹,

Cunff

Raymond³

et al. 2015

International Symposium on Microelectronics

Self Cite

View full text Add to dashboard Cite

show abstract

Uniformity Control of 3-D Stacked ICs: Optical Metrology and Statistical Analysis

Cunff

Fresquet

Raymond³

et al. 2015

IEEE Trans. Semicond. Manufact.

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This paper evaluates various optical metrology techniques for in-line control of the uniformity of 3-D stacked structures. Key process steps during 3-D integration flow were identified and characterized in order to quantify their specific intra-wafer dispersion signature. The cross correlation between the various intra-wafer process step signatures was then analyzed to verify the data set consistency. The analysis indicated that the measurement data are consistent over the process integration flow, and that a simple model quantitatively explains the intrawafer signatures observed. The results highlight the importance of controlling those specific steps and provide a new alternative for advanced process control implementation.

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Use of optical metrology for wafer level packaging of CMOS image sensor

Cited by 2 publications

References 1 publication

Control of 3D IC process steps by optical metrologies

Control of 3D IC process steps by optical metrologies

Uniformity Control of 3-D Stacked ICs: Optical Metrology and Statistical Analysis

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