Use of Silicon-Germanium Technology for the Development of Active Microwave Units of Active Electronically Scanned Arrays

Timoshenkov, Valeri; Efimov, A.G.

doi:10.1134/s1063739717070125

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структурная схема мис1

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2019

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“…На основе аналитического обзора серийно выпускаемой продукции [1-3] и литературных источников [4][5][6][7][8][9], содержащих результаты исследований ППМ АФАР, разработана структурная схема сложнофункциональной МИС (СФ МИС), представленная на рис. 1.…”

Section: структурная схема мисunclassified

Simulation of the Low-Power Part of the C-Band Transceiving Modules for AESA in the MMIC Form

Budnyaev¹,

Kravchenko²,

Snegur³

et al. 2019

Rocket-space device engineering and information systems

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The paper presents the development results of electric circuits of functional units and layout of the integrated transceiver module of active electronically scanned arrays (AESA) of the C-band based on the 0.18 µm SiGe BiCMOS technology. The integrated circuit consists of control units for amplitude and phase of a microwave signal, reception and transmission modes switchers, amplifiers, digital control unit, and units for parameter temperature corrections. The root mean square (RMS) deviation in amplitude does not exceed 0.4 dB. The RMS deviation in phase is below 4.2 degree. The noise factor value of the reception path does not exceed 5.2 dB. The output power in the compression point 1 dB in the transmission mode is 8.5 dBm. The power consumption in the reception and transmission modes is below 195 mW and 365 mW, respectively. The layout area is 6 mm 2 .

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