Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films

Properties of DC magnetron sputtered indium-tin oxide films with the assistance of tiny H 2 O vapor at low temperature

“…With fixed other process parameters, a higher deposition power would provide a higher deposition rate. Films deposited at higher deposition rates is expected to have larger crystalline grains, which would lead to higher charge carrier mobility and thus lower resistivity 17 .…”

Influence of heat treatment on characteristics of In2O3/Ag/MoO3 multilayer films as transparent anode for optoelectronic applications

“…Carrier concentration was measured using Hall effect. The Hall coefficient (R H ) was determined using the formula [30]:…”

Effect of thermal annealing on properties of polycrystalline Titanium dioxide (TiO2) thin film prepared by simple chemical method

“…TiO 2 can be used as solar cell applications (DSSC) [10] electrochemical cells (PEC) [11] chemical sensors [12] and self-cleaning coatings [13]. Thin films of TiO2 are deposited by various methods including electron beam [14,15] magnetron sputtering technique [16], plasma evaporation [17], pulsed laser deposition [18], self-assembly process [19], laser chemical vapor depositing [20,21] and sol-gel method [22]. BaAbbad et al (2012) synthesized the TiO2 nanoparticles catalyst by sol-gel method using the titanium tetraisopropoxide as starting material.…”