2011
DOI: 10.4028/www.scientific.net/msf.679-680.657
|View full text |Cite
|
Sign up to set email alerts
|

Use of Vacuum as a Gate Dielectric: The SiC VacFET

Abstract: We introduce the vacuum field-effect transistor (VacFET), the first SiC FET to use a vacuum-sealed cavity in place of the traditional, solid gate dielectric. This device architecture eliminates the need to thermally oxidize the SiC surface, a practice which has been widely reported to inhibit the performance and reliability of SiC MOSFETs. Using a combination of batch-compatible electronics and micromachining processing techniques, a polycrystalline SiC bridge is suspended above a 4H-SiC substrate, and the und… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

2012
2012
2024
2024

Publication Types

Select...
2

Relationship

1
1

Authors

Journals

citations
Cited by 2 publications
(3 citation statements)
references
References 11 publications
0
3
0
Order By: Relevance
“…It is noteworthy that the observed behavior aligns with conventional MOSFET and TFET devices; however, the fully configurable nanodevices studied here are doping-free and dielectric-free. This characteristic offers benefits in terms of fabrication flexibility and radiation immunity, respectively [54,55], making them highly advantageous for radiation-immune nanoelectronics. In fact, vacuum gate dielectrics offer significant advantages in terms of radiation hardness.…”
Section: Resultsmentioning
confidence: 99%
“…It is noteworthy that the observed behavior aligns with conventional MOSFET and TFET devices; however, the fully configurable nanodevices studied here are doping-free and dielectric-free. This characteristic offers benefits in terms of fabrication flexibility and radiation immunity, respectively [54,55], making them highly advantageous for radiation-immune nanoelectronics. In fact, vacuum gate dielectrics offer significant advantages in terms of radiation hardness.…”
Section: Resultsmentioning
confidence: 99%
“…In late 2010 [1], the authors reported the development, fabrication, and preliminary characterization of a field-effect device which used a vacuum-sealed cavity as the gate dielectric: the SiC vacuum field-effect transistor (VacFET). In principle, the use of vacuum as the gate insulator avoids thermal oxidation of the SiC surface, something that has been widely reported to inhibit performance of the SiC MOSFET [2] and which has been the subject of considerable debate.…”
Section: Introductionmentioning
confidence: 99%
“…This mask design allows a direct comparison of SiC MOSFETs and VacFETs subjected to the same process conditions (identical gate insulator thickness of 190 nm) and separated by just a few millimeters on the same wafer. For more details about device fabrication, see [1] and [3].…”
Section: Introductionmentioning
confidence: 99%