Using a Patterned Sapphire Template And The Lift-off Technique To Synthesize ZnO Nanoflower Arrays With Enhanced Photoluminescence Properties

Abstract

In this study, the hydrothermal method was used to synthesize ZnO nanorods and ZnO nanoflower arrays. Two different substrates were used to prepare the ZnO seed layer. For the p-type silicon <100> wafer, a prepared ZnO gel was deposited as the seed layer using the spin coating method. When a patterned sapphire recess-type substrate was used as a template, Al film, with a thickness of 120 nm, and OE-6370HF AB glue were used as a sacrificial layer and an imprinting lithography carrier for the ZnO seed layer, respectively. To prepare the array-patterned ZnO seed layers with a protrusion structure, a lift-off technique was used. A 0.2 M solution of zinc acetate dihydrate (Zn(CH3COO)2-2H2O) was used at a synthesis temperature of 90°C and a synthesis time of 10–60 min. Because the ZnO seed layer had a protrusion and matrix structure, the ZnO nanorods grew in the vertical bottom direction to form ZnO nanoflower arrays. X-ray diffraction patterns, scanning electron microscopy, and a focused ion beam system were used to analyze and compare the crystal characteristics and the heights and widths of the ZnO nanorods and ZnO nanoflower arrays. We found that the photoluminescence properties were enhanced in the ZnO nanoflower arrays compared with the ZnO nanorods.