Using Atom-Probe Tomography to Understand<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>Zn</mml:mi><mml:mi mathvariant="normal">O</mml:mi><mml:mo>∶</mml:mo><mml:mi>Al</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>Si</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:mo>/</mml:mo><mml:mi>Si</mml:mi></mml:mrow></mml:math>Schottky Diodes

Jaramillo, Rafael; Youssef, Amanda; Akey, Austin; Schoofs, Frank; Ramanathan, Shriram; Buonassisi, Tonio

doi:10.1103/physrevapplied.6.034016

Cited by 8 publications

(7 citation statements)

References 41 publications

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“…The latter is a tool for 3D imaging of the composition of thin films at the atomic scale, which is found to be particularly powerful for doped films. 16 − 19 …”

Section: Introductionmentioning

confidence: 99%

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Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Giddings

Verheijen

et al. 2018

Chem. Mater.

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The maximum conductivity achievable in Al-doped ZnO thin films prepared by atomic layer deposition (ALD) is limited by the low doping efficiency of Al. To better understand the limiting factors for the doping efficiency, the three-dimensional distribution of Al atoms in the ZnO host material matrix has been examined on the atomic scale using a combination of high-resolution transmission electron microscopy (TEM) and atom probe tomography (APT). Although the Al distribution in ZnO films prepared by so-called “ALD supercycles” is often presented as atomically flat δ-doped layers, in reality a broadening of the Al-dopant layers is observed with a full-width–half-maximum of ∼2 nm. In addition, an enrichment of the Al at grain boundaries is observed. The low doping efficiency for local Al densities > ∼1 nm–3 can be ascribed to the Al solubility limit in ZnO and to the suppression of the ionization of Al dopants from adjacent Al donors.

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“…The latter is a tool for 3D imaging of the composition of thin films at the atomic scale, which is found to be particularly powerful for doped films. 16 − 19 …”

Section: Introductionmentioning

confidence: 99%

“…The spatial distribution of the Al atoms was obtained at an atomic resolution by transmission electron microscopy (TEM) and atom probe tomography (APT). The latter is a tool for 3D imaging of the composition of thin films at the atomic scale, which is found to be particularly powerful for doped films. − …”

Section: Introductionmentioning

confidence: 99%

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Giddings

Verheijen

et al. 2018

Chem. Mater.

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“…Study concerning the band offset and the Fermi level position at the interface of ZnO/Si is also necessary, since charge transfer and recombination activity depend on these factors . Jaramillo et al have recently related conductive oxide/Si interface with metal/Si Schottky junction in terms of Fermi level pinning . Using electronic transport and atom‐probe tomography, they have demonstrated that the Fermi level is pinned in the lower half of the Si bandgap at ZnO:Al/SiO 2 /Si Schottky junction.…”

Section: Discussionmentioning

confidence: 99%

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Hussain

2017

Progress in Photovoltaics

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Several research groups are currently working on n-ZnO/p-Si heterojunction solar cell, and recently, Pietruszka et al [Sol. Energ. Mat. Sol. Cells 147 (2016) 164-170] has reported the highest efficiency of 7.1% for this structure. The main challenge is to enhance the open circuit voltage up to theoretically predicted value of >0.6 V. This paper reports >20% improvement in open circuit voltage of n-ZnO/p-Si solar cell by depositing amorphous-ZnO at the interface at room temperature that possibly improves the passivation and/or avoids oxide formation at the interface during ZnO deposition. Two other materials, aluminum nitride and amorphous-Si, have also been used as buffer layers to evaluate their effect on suppression of interface states. Furthermore, additional advantage of ZnO as an antireflector has been experimentally verified for different thicknesses of ZnO film.

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“…[ 112–133 ] d) Measured Schottky barrier heights of different TCOs, CBMs, and TMOs. [ 134–141 ] X‐ray photoelectron spectroscopy (XPS) spectra of e) nondoped, f) V‐doped, and g) Nb‐doped MoO 3− x films. Reproduced with permission.…”

Section: Characterization Of Dfpc Materials With Key Parametersmentioning

confidence: 99%

“…c) Bandgap diagrams and work function positions (dashed lines) of different TCOs, CBMs, TMOs, and FCMs with the c-Si energy band edges (gray bar) as a reference. d) Measured Schottky barrier heights of different TCOs, CBMs, and TMOs [134][135][136][137][138][139][140][141]. X-ray photoelectron spectroscopy (XPS) spectra of e) nondoped, f ) V-doped, and g) Nb-doped MoO 3Àx films.…”

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confidence: 99%

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

Kim,

Park,

Cho

et al. 2023

Solar RRL

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Crystalline silicon (c‐Si) solar cells have dominated the photovoltaic market due to their superior mechanical and thermal robustness, nonhazardous nature, optimal energy bandgap, and the availability of established manufacturing techniques. However, conventional c‐Si solar cells fabricated through thermal doping processes present challenges such as high recombination rates and increased production costs. Recently, dopant‐free solar cells have emerged as a promising next‐generation approach; they offer numerous advantages, such as reduced recombination, cost‐effectiveness, environmental friendliness, and applicability to nano‐ and submicrometer structures. This review evaluates the strengths and weaknesses of dopant‐free passivating contact materials for emitters, tracing the development of dopant‐free solar cells from the earliest reports to the current state‐of‐the‐art. A systematic evaluation of these materials based on their electrical and optical properties, coating conformality, stability, and overall photovoltaic performance is presented. Moreover, the limitations of dopant‐free solar cells are identified and strategies to further enhance their efficiency are proposed.

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Using Atom-Probe Tomography to UnderstandZnO∶Al/SiO2/SiSchottky Diodes

Cited by 8 publications

References 41 publications

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Dopant Distribution in Atomic Layer Deposited ZnO:Al Films Visualized by Transmission Electron Microscopy and Atom Probe Tomography

Improvement in open circuit voltage of n‐ZnO/p‐Si solar cell by using amorphous‐ZnO at the interface

Rational Approach for High‐Efficiency Dopant‐Free Solar Cells Characterized with Key Parameters

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