2017
DOI: 10.4028/www.scientific.net/msf.886.37
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Using Deionized Water with Ethanol as a Solvent of CuS EGFET as pH Sensor

Abstract: In this research work, copper sulphide was deposited on glass substrate using spray pyrolysis deposition. The precursors were dissolved in deionized water (DIW) and ethanol, mixed at a ratio of 7:3. The distance between nozzle and substrate was 30 cm and the substrate temperature was maintained at 200 °C. XRD spectra analysis showed four distinctive peaks of high intensity, which indicate pure CuS covellite phase with average crystallite size of 28.3 nm. FESEM characterization of the thin film structure showed… Show more

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Cited by 3 publications
(2 citation statements)
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“…investigated the dependence of performance of the sensor on the thickness of the CuS film. [ 306 ] The group has also reported other works in which Ni/ITO thin film, [ 307 ] ITO thin film by RF‐sputtering method, [ 308 ] CuS membranes deposited on glass substrates, [ 309 ] multilayer ZnO/Pd/ZnO structure, [ 310 ] CuS membranes deposited using spray pyrolysis, laser‐assisted spray pyrolysis, and laser‐assisted spray photolysis deposition techniques [ 292,311 ] as EGFET‐based pH sensors with varied temperature treatments to enhance the sensor response. Das et al.…”
Section: Fet‐based Microsensorsmentioning
confidence: 99%
“…investigated the dependence of performance of the sensor on the thickness of the CuS film. [ 306 ] The group has also reported other works in which Ni/ITO thin film, [ 307 ] ITO thin film by RF‐sputtering method, [ 308 ] CuS membranes deposited on glass substrates, [ 309 ] multilayer ZnO/Pd/ZnO structure, [ 310 ] CuS membranes deposited using spray pyrolysis, laser‐assisted spray pyrolysis, and laser‐assisted spray photolysis deposition techniques [ 292,311 ] as EGFET‐based pH sensors with varied temperature treatments to enhance the sensor response. Das et al.…”
Section: Fet‐based Microsensorsmentioning
confidence: 99%
“…EGFET and ion-sensitive field-effect transistors have the same concept, but the main difference is that the membrane of EGFET is extended from MOSFET. 23 EGFETs have many apparent advantages over ion-sensitive field-effect transistors, such as low cost, simple passivation and packaging, temperature and light insensitivity, the flexible shape of the extended gate structure, and good long-term stability. 24 Because of these advantages, EGFETs are regarded as substitutes for traditional ion-sensitive field-effect transistors.…”
mentioning
confidence: 99%