Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Tang, Shun-Wei; Bakeroot, Benoit; Huang, Zhen-Hong; Chen, Szu-Chia; Lin, Wei-Syuan; Lo, Ting-Chun; Borga, M.; Wellekens, D.; Posthuma, Niels; Decoutere, Stefaan; Wu, Tian-Li

doi:10.1109/ted.2022.3231566

Cited by 18 publications

(4 citation statements)

References 22 publications

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“…Wei et al [ 12 ] studied the V TH evolution of GaN HEMTs with a drain-induced dynamic V TH shift in GaN HEMTs with Schottky gate contacts and explained the underlying mechanism with a charge storage model. Tang S. W. et al [ 14 ] investigated gate current characteristics to explain the phenomenon of threshold voltage shift in AlGaN/GaN HEMTs with p-GaN gates. The threshold voltage shift was observed by applying a positive gate bias for a set stress time, and consistent trap energy levels with activation energies of EA ~ 0.6 eV were found.…”

Section: Introductionmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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With the development of high-voltage and high-frequency switching circuits, GaN high-electron-mobility transistor (HEMT) devices with high bandwidth, high electron mobility, and high breakdown voltage have become an important research topic in this field. It has been found that GaN HEMT devices have a drift in threshold voltage under the conditions of temperature and gate stress changes. Under high-temperature conditions, the difference in gate contact also causes the threshold voltage to shift. The variation in the threshold voltage affects the stability of the device as well as the overall circuit performance. Therefore, in this paper, a review of previous work is presented. Temperature variation, gate stress variation, and gate contact variation are investigated to analyze the physical mechanisms that generate the threshold voltage (VTH) drift phenomenon in GaN HEMT devices. Finally, improvement methods suitable for GaN HEMT devices under high-temperature and high-voltage conditions are summarized.

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Section: Introductionmentioning

confidence: 99%

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Dai,

Wang,

2024

Micromachines

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“…In fact, deep levels are responsible for several physical phenomena, including carrier trapping, which leads to parametric instability [1][2][3][4][5] and degradation of the dynamic performance [6][7][8][9]; they can act as recombination centers [10,11], thus contributing to a decrease in the internal quantum efficiency of light emitters [12][13][14][15], a decrease in the carrier lifetime [16], and limited spectral purity of optoelectronic devices [17][18][19][20]. In addition, trap states can assist tunneling processes, which have detrimental effects on the reliability of several devices, including high electron mobility transistors (HEMTs) [21][22][23] and light-emitting diodes (LEDs) [24][25][26][27], and promote leakage current [22,28].…”

Section: Introductionmentioning

confidence: 99%

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Fregolent,

Piva,

Buffolo

et al. 2024

J. Phys. D: Appl. Phys.

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The study of deep level defects in semiconductors has always played a strategic role for the development of electronic and optoelectronic devices. In fact, deep levels have a strong impact on many of the device properties, including the efficiency, stability, and reliability because they can drive several physical process. Despite the advancements in crystal growth, wide and ultrawide bandgap semiconductors (such as gallium nitride and gallium oxide) are still strongly affected by the formation of defects that in general can act as carrier traps or generation-recombination centers. Conventional techniques used for deep level analysis in silicon need to be adapted for identifying and characterizing defects in wide bandap materials. This topical review paper presents an overview of reviews the theory of deep levels in semiconductor; in addition, we present a review and original results and on the application, limits and perspectives of two widely adopted most common deep -levels detection techniques, namely capacitance deep level transient spectroscopy and deep level optical spectroscopy, with specific focus on wide bandgap semiconductors. Finally, the most common traps of GaN and β-Ga2O3 are reviewed.

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“…GaN-based high electron mobility transistors (HEMTs) are increasingly widely used in power electronics applications, owing to the excellent material properties such as high carrier mobility and high critical breakdown field. [1][2][3][4][5][6][7][8] The GaN power devices are the important candidates for next generation power conversion applications. Enhancement-mode (E-mode) HEMT is significant for the power application which can reduce power loss by keeping the device closed at zero gate bias.…”

Section: Introductionmentioning

confidence: 99%

Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates

Zhao,

Ren,

Luo

et al. 2023

Physica Status Solidi (a)

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Hybrid p‐GaN Ohmic drain reverse blocking high electron mobility transistors (RB‐HEMTs) and conventional p‐GaN Enhancement‐mode (E‐mode) HEMTs are designed and fabricated on the Si substrates. Compared with the conventional p‐GaN HEMT, the RB‐HEMT can achieve great reverse blocking capability. The forward and reverse blocking voltages of the RB‐HEMT are 1116 V and 1056 V and the turn‐on voltage of the device is 1.07 V. When the temperature rises from 25 °C to 150 °C, the turn‐on voltage of the RB‐HEMT increases from 1.07V to 1.10 V, and the Vth increases from 1.97V to 2.07 V. The difference in turn‐on voltage and threshold voltage is mainly due to the different metals in contact between the gate and drain electrodes and p‐GaN. The reverse leakage current of the RB‐HEMT is 1.16 × 10−1 mA mm−1 when the temperature is 150 °C, which still keep good reverse blocking ability at high temperatures.

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Using Gate Leakage Conduction to Understand Positive Gate Bias Induced Threshold Voltage Shift in p-GaN Gate HEMTs

Cited by 18 publications

References 22 publications

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors

Advanced defect spectroscopy in wide-bandgap semiconductors: review and recent results

Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid p‐GaN Ohmic Drain on the Si Substrates

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