Using metal-insulator-semiconductor structures to investigate dielectrics charging in capacitive microelectromechanical switches

Abstract

Capacitance-voltage characteristics measured on metal-insulator-semiconductor structures are used to investigate dielectrics charging in the capacitive microelectromechanical switches. An analytical model based on this method has been established. Effects of electrical stress on charge accumulation in silicon-rich nitride were experimentally investigated. The charging parameters of the silicon-rich nitride were extracted by the exponential curve fitting method. The experimental results show that three main physical processes dominate the charging behavior of the silicon-rich nitride. It is expected that the accumulated charges can be eliminated by using an offset square-wave voltage to actuate the switches.

Ku to V-band 4-bit MEMS phase shifter bank using high isolation SP4T switches and DMTL structures

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17-30 GHZ Reliable and Compact Analog Phase Shifter Using Lateral Micromachined Sp7t Switches, and DMTL Arrays

“…Different types of phase shifters have been reported in the literature over last two decades [6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23] in narrowband or wideband. One of the major challenges of a wideband phase shifter is to track any frequency over a wide spectrum without compromising other performances like loss, matching, and phase error.…”

Investigation of charge relaxation of dielectrics for capacitive micro-actuators

“…Therefore, the MIS structure should be a better model for investigating the charge relaxation of dielectrics in capacitive micro-actuators. In our previous paper [9,10], the analytical model based on MIS structure has been established for modeling the dielectrics charging in the RF MEMS switches, the experimental results demonstrated that the model is helpful for the quantitative analysis of dielectrics charging and discharging in RF MEMS switches.…”