Using NH₃ Plasma Pretreatment to Improve the Characteristics of Organic Spin-on Low-k materials for Copper Metallization

Abstract

We describe the fabrication and electrical characteristics of single-wall carbon-nanotubes field-effect transistors (CNT-FETs) with a non-volatile memory function using ferroelectric thin films as gate insulators. The ferroelectric-gate CNT-FETs were fabricated using single-wall CNTs synthesized from alcohol by catalytic chemical vapor deposition and sol-gel derived PbZr 0:5 Ti 0:5 O 3 thin films. The ferroelectric-gate CNT-FETs showed modulation of the drain current with the gate voltage and the threshold voltage shift (memory window) on the drain current-gate voltage characteristics. Moreover, the memory window was saturated around 1.1 V as the gate voltage sweeping range increased. These results indicate that carriers in CNTs are controlled by spontaneous polarization of the ferroelectric films. Because ferroelectrics exhibit complex couplings between their electrical, structural, mechanical, thermal, and optical properties, and because CNTs have unique mechanical and electrical properties, ferroelectric-gate CNT-FETs offer promise as potentially useful nanoelectronics devices not only for non-volatile memory elements but also for high-sensitivity sensors.

Plasma Diagnostics for NH3 Plasmas Using a Quartz Sensor at Various Pressures

“…Actually, NH 3 plasma is widely used for production processes for nitration, ashing, and deposition, for which it is expected to supply H, N, NH, and NH 2 radicals. [6][7][8][9][10][11][12][13] However, almost no relevant literature providing information about molecules in NH 3 plasmas has been reported to date. Although the Q-sensor cannot measure these radicals, it can detect and quantify gas molecules of NH 3 , H 2 , and N 2 in NH 3 plasmas, which are related to H, N, NH, and NH 2 radicals.…”