Using persistent photoconductivity to write a low-resistance path in SrTiO3

Poole, V.; Jokela, S. J.; McCluskey, M. D.

doi:10.1038/s41598-017-07090-2

Cited by 27 publications

(17 citation statements)

References 29 publications

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“…The mechanism for the observed optical control of superconductivity can be complex, as UV light affects SrTiO 3 in many ways. For example, if defects are introduced to SrTiO 3 by the substrate pre-annealing step in UHV, the relaxation of defects after carrier excitation can serve as hole traps and produce persistent UV photoconductance 27,28 . Exposing freshly cleaved SrTiO 3 (001) surface to intense extreme ultraviolet (EUV) light can lead to the formation of surface two-dimensional electron gas (2DEG) 29–31 , possibly originating from the creation of either oxygen vacancies or surface reconstructions.…”

Section: Resultsmentioning

confidence: 99%

Light induced non-volatile switching of superconductivity in single layer FeSe on SrTiO3 substrate

Yang

Yan

et al. 2019

Nat Commun

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The capability of controlling superconductivity by light is highly desirable for active quantum device applications. Since superconductors rarely exhibit strong photoresponses, and optically sensitive materials are often not superconducting, efficient coupling between these two characters can be very challenging in a single material. Here we show that, in FeSe/SrTiO3 heterostructures, the superconducting transition temperature in FeSe monolayer can be effectively raised by the interband photoexcitations in the SrTiO3 substrate. Attributed to a light induced metastable polar distortion uniquely enabled by the FeSe/SrTiO3 interface, this effect only requires a less than 50 µW cm−2 continuous-wave light field. The fast optical generation of superconducting zero resistance state is non-volatile but can be rapidly reversed by applying voltage pulses to the back of SrTiO3 substrate. The capability of switching FeSe repeatedly and reliably between normal and superconducting states demonstrate the great potential of making energy-efficient quantum optoelectronics at designed correlated interfaces.

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Section: Resultsmentioning

confidence: 99%

Light induced non-volatile switching of superconductivity in single layer FeSe on SrTiO3 substrate

Yang

Yan

et al. 2019

Nat Commun

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“…We anticipate that the GPPC effect can be effectively exploited further for applications in electronic, optoelectronic, and biotechnological devices (see, e.g., refs. [32][33][34][35][36] ).…”

Section: Modification Of the Optical Emission By Uv Irradiationmentioning

confidence: 99%

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

et al. 2021

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Monolayer transition metal dichalcogenides (TMD) have numerous potential applications in ultrathin electronics and photonics. The exposure of TMD-based devices to light generates photo-carriers resulting in an enhanced conductivity, which can be effectively used, e.g., in photodetectors. If the photo-enhanced conductivity persists after removal of the irradiation, the effect is known as persistent photoconductivity (PPC). Here we show that ultraviolet light (λ = 365 nm) exposure induces an extremely long-living giant PPC (GPPC) in monolayer MoS2 (ML-MoS2) field-effect transistors (FET) with a time constant of ~30 days. Furthermore, this effect leads to a large enhancement of the conductivity up to a factor of 107. In contrast to previous studies in which the origin of the PPC was attributed to extrinsic reasons such as trapped charges in the substrate or adsorbates, we show that the GPPC arises mainly from the intrinsic properties of ML-MoS2 such as lattice defects that induce a large number of localized states in the forbidden gap. This finding is supported by a detailed experimental and theoretical study of the electric transport in TMD based FETs as well as by characterization of ML-MoS2 with scanning tunneling spectroscopy, high-resolution transmission electron microscopy, and photoluminescence measurements. The obtained results provide a basis for the defect-based engineering of the electronic and optical properties of TMDs for device applications.

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“…Among these, STO exhibits very large (>10 3 ) photocurrent on‐off ratio, well consistent with the previous results. [ 37–39 ] To explore the polarization control of electronic transport in BWO, current–voltage ( I–V ) characteristics of a BWO/STO device are obtained using the planar electrodes under an illumination by a solar simulator (215 mW cm −2 , about 2 sun), as shown in Figure 3b. As observed from Figure S3a in the Supporting Information, the electric‐field‐switchable intrinsic I sc and V oc of monodomain BWO on DSO are ≈0.42 pA (current density ≈0.014 mA cm −2 ) and ≈0.58 V. A dramatically enhanced intrinsic I sc of ≈485 pA (current density ≈16.17 mA cm −2 , above three orders of magnitude increase) is observed in monodomain BWO on STO, where a V oc of ≈0.71 V (≈2.4 × 10 3 V cm −1 , comparable to that in other ferroelectrics at room temperature [ 27 ] ) is also switchable as shown in Figure 3c.…”

Section: Figurementioning

confidence: 99%

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

et al. 2020

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The coexistence of large conductivity and robust ferroelectricity is promising for high‐performance ferroelectric devices based on polarization‐controllable highly efficient carrier transport. Distinct from traditional perovskite ferroelectrics, Bi2WO6 with a layered structure shows a great potential to preserve its ferroelectricity under substantial electron doping. Herein, by artificial design of photosensitive heterostructures with desired band alignment, three orders of magnitude enhancement of the short‐circuit photocurrent is achieved in Bi2WO6/SrTiO3 at room temperature. The microscopic mechanism of this large photocurrent originates from separated transport of electrons and holes in [WO4]−2 and [Bi2O2]+2 layers respectively with a large in‐plane conductivity, which is understood by a combination of ab initio calculations and spectroscopic measurements. The layered electronic structure and appropriately designed band alignment in this layered ferroelectric heterostructure provide an opportunity to achieve high‐performance and nonvolatile switchable electronic devices.

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Using persistent photoconductivity to write a low-resistance path in SrTiO3

Cited by 27 publications

References 29 publications

Light induced non-volatile switching of superconductivity in single layer FeSe on SrTiO3 substrate

Light induced non-volatile switching of superconductivity in single layer FeSe on SrTiO3 substrate

Giant persistent photoconductivity in monolayer MoS2 field-effect transistors

Large Switchable Photoconduction within 2D Potential Well of a Layered Ferroelectric Heterostructure

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