Using porous silicon as semi-insulating substrate for β-SiC high temperature optical-sensing devices

A comparative study of lateral SiCN/porous silicon and vertical SiCN/porous silicon junctions for sensing ultraviolet light

“…In this work, C 3 H 8 was used as the carbon source, and obtained the alloy composition as Si 0.48 C 0.15 N 0.37 in base of the Auger Electron Spectroscopy measurements. On the other hand, owing to the PS layer's sponge-like structure to relieve strain and the development of cracks after the post cooling [13][14][15][16][17][18], and thus favors the nucleation. As a result, the SiCN film grown on a PS layer has a better single crystalline property as can be found from the low angle X-ray diffraction (XRD) spectra shown in Fig.…”

“…Hence, we think, it should be more attributed to the PS layer's flexible feature. A flexible PS severs as the buffer layer to relax the stress caused by the different thermal expansion coefficient between the n-SiCN and the p-Si substrate, and thus suppresses the generation of defects in the interface [17,18]. As illustrated in Fig.…”

“…Prior to the anodization, Al (3000-5000 Å) film was deposited on the back side of the sample and annealed with 450°C for 15 min in forming gas to distribute the etching current uniformly. The anodic etching was carried out in an HF-ethanol solution (HF:H 2 O:C 2 H 5 OH = 1:2:2), at a constant current density of 30 mA/cm 2 for 10 min [17,18] …”

Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

“…[5][6][7][8][9] Auger electron spectroscopy (AES), x-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM), and transmission electron microscopy (TEM) are employed to evaluate the chemical and physical characteristics of these films and are compared to each other. The method has been applied successfully in preparing highquality ␤-SiC film on a Si substrate.…”

Preparation and Characterizations of the High UV Sensitivity Porous Diamond-Like Carbon Thin Film MSM Photodiodes

“…Conventionally, a porous film is implemented by the electrochemical etching method [6]; however, it is very difficult to get a porous DLC film with etching method for its extreme chemical stability. In this work, for the first time, we successfully get the porous DLC film on the porous Si substrate to develop a high UV sensitivity metal-semiconductor-metal (MSM) photodiode.…”