1996
DOI: 10.1007/bf01571688
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Using positron 2D-ACAR as a probe of point defects in GaAs: The As vacancy as a case study

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Cited by 6 publications
(6 citation statements)
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“…The comparison of figures 1a and 1b shows the following features of similarity in the  curves: a) a broad maximum centered at p x =0; b) a well-defined peak near p x =810 -3 m 0 c; c) a negative tail in the high momentum region. The same features can be found in previous CDB measurements for defected Al [29,30]. On the other hand, it may be noted that the curves in figures 1a and 1b cannot be scaled to a common master curve, as it would be predicted by equation (3) if the morphology of the traps were the same in quenched and in deformed Al.…”
Section: Electron-positron Momentum Spectra In Alsupporting
confidence: 82%
See 1 more Smart Citation
“…The comparison of figures 1a and 1b shows the following features of similarity in the  curves: a) a broad maximum centered at p x =0; b) a well-defined peak near p x =810 -3 m 0 c; c) a negative tail in the high momentum region. The same features can be found in previous CDB measurements for defected Al [29,30]. On the other hand, it may be noted that the curves in figures 1a and 1b cannot be scaled to a common master curve, as it would be predicted by equation (3) if the morphology of the traps were the same in quenched and in deformed Al.…”
Section: Electron-positron Momentum Spectra In Alsupporting
confidence: 82%
“… The broad maximum at p x =0 comes from the narrowing of the valence electron momentum distribution associated with the reduction of electron density at the defect. This effect is well known since the early studies of positron trapping at defects in metals [44], but is clearly visible also in semiconductors [29,30,42,43].  The negative value taken by Δ at high momentum is simply due to the reduction of the core electron contribution to annihilation, which always occurs when the positron wavefunction becomes localized in an open-volume defect.…”
Section: Electron-positron Momentum Spectra In Almentioning
confidence: 95%
“…This effect is well known since the early studies of positron trapping at defects in metals, 7 but is clearly visible also in semiconductors. [8][9][10][11] The sensitivity of the effect to the size of the positron trap can be judged from Fig. 4, which shows the e + -e − momentum one-dimensional ͑1D͒ distribution including only the valence electron contribution; the curve for bulk Al is reported for comparison.…”
Section: Theorymentioning
confidence: 99%
“…These techniques are capable of characterizing defects in semiconductors. [17][18][19][20] The CDB method is able to demonstrate electron momentum distributions spectroscopically in a wide range. 21,22 In some cases, the examination of high-momentum region revealed the chemical environments of positron annihilation sites.…”
Section: Introductionmentioning
confidence: 99%