2005
DOI: 10.1080/15421400590890804
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Using the Field Effect in Silicon to Study Charge Processes in a Nematic Cell

Abstract: We propose a simple method for the qualitative study of charge processes in a liquid crystal layer at the silicon surface. The method is based on the field effect that has been induced by charges that are localized near the silicon surface. The method is sensitive to the sign of accumulating charge and does allow monitoring a change of the surface charge.

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Cited by 2 publications
(1 citation statement)
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“…When the positive ions are collected at the silicon surface they push away the charge carriers in silicon from the surface layer into bulk. Therefore, the so-called depletion layer [15,16] in silicon is formed. Some part of the voltage applied to the cell drops across the depletion layer having a high resistance that gives rise to a minimum of current.…”
Section: Introductionmentioning
confidence: 99%
“…When the positive ions are collected at the silicon surface they push away the charge carriers in silicon from the surface layer into bulk. Therefore, the so-called depletion layer [15,16] in silicon is formed. Some part of the voltage applied to the cell drops across the depletion layer having a high resistance that gives rise to a minimum of current.…”
Section: Introductionmentioning
confidence: 99%