2023
DOI: 10.1063/5.0183277
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Using wafer scale ferroelectric domains of LiNbO3 to form permanent planar pn junction in narrow band gap nanocrystals

Mariarosa Cavallo,
Ankita Ram,
Satakshi Pandey
et al.

Abstract: p–n junctions based on nanocrystals now serve as fundamental components in optoelectronics. However, the process of designing these p–n junctions has largely relied on empirical choices, either for ligand exchange or for the selection of charge transport layers. Therefore, a systematic strategy is still lacking. In this study, we explore the utilization of ferroelectric domains as a general method for remotely inducing the formation of a p–n junction. To ensure compatibility with devices of various designs, we… Show more

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