“…Here, J n and J p represent the electron and hole current, respectively, throughout the Ta 3 N 5 electrode, and q is the elementary charge. The continuity equations were only solved inside the electrode, as conduction bands are not formed in the liquid where ionic charge transport dominates. ,, In this regard, appropriate boundary conditions must be applied at both the electrode bulk and liquid interface, respectively. Deep within the Ta 3 N 5 electrode, the carrier concentration was set equal to the bulk values (forming Dirichlet boundary conditions for electrons and holes), whereas Neumann boundary conditions were applied at the semiconductor–liquid interface because of the electron ( J n | int ) and hole ( J p | int ) current transfer expressions , Here, n s and p s are, respectively, surface electron and hole concentration; n s0 and p s0 are the corresponding surface electron and hole concentrations in equilibrium; v t, n and v t, p are the electron and hole transfer velocities (essentially rate terms).…”