2019
DOI: 10.1021/acs.jpcc.9b07536
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Utilizing Band Diagrams To Interpret the Photovoltage and Photocurrent in Photoanodes: A Semiclassical Device Modeling Study

Abstract: The photovoltage and photocurrent both serve as important design metrics when assessing the performance of photoanodes within photoelectrochemical cells. However, to date, wide disagreement persists (even in the recent literature) regarding how the photovoltage should be physically interpreted; this lack of consensus is further coupled to physical interpretations of the photocurrent. In this work, we utilize state-of-the-art device modeling to help clarify the physical origins of both the photovoltage and phot… Show more

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Cited by 17 publications
(38 citation statements)
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“…284 Photovoltage, flat band potential and photocurrent are important measures when designing water splitting catalysts. Yet, there is still a lack of consensus regarding their physical interpretation, 285 and uncertainties when determining these values at nanostructured materials. 286 Metal nanosheets containing d 0 transitions metals such as titanates, niobates and tantalates are usually n-type semiconductors with adequate light adsorbing, electron accepting, and electron transfer mediating properties.…”
Section: Bulk Electrochemical Methodsmentioning
confidence: 99%
“…284 Photovoltage, flat band potential and photocurrent are important measures when designing water splitting catalysts. Yet, there is still a lack of consensus regarding their physical interpretation, 285 and uncertainties when determining these values at nanostructured materials. 286 Metal nanosheets containing d 0 transitions metals such as titanates, niobates and tantalates are usually n-type semiconductors with adequate light adsorbing, electron accepting, and electron transfer mediating properties.…”
Section: Bulk Electrochemical Methodsmentioning
confidence: 99%
“…In the simulation results, the coupled Poisson-continuity equations were numerically solved with appropriate boundary conditions. In photocatalytic systems, such as Ta 3 N 5 , the steady-state electron and hole continuity equations can be expressed in the form where annihilated and generated electrons/holes are captured through the recombination ( R n, p ) and generation ( G n, p ) rates. A detailed discussion on the recombination and generation terms applied can be found in refs., , a short summary of the recombination and generation terms can be found in the supporting information. Here, J n and J p represent the electron and hole current, respectively, throughout the Ta 3 N 5 electrode, and q is the elementary charge.…”
Section: Methods Sectionmentioning
confidence: 99%
“…Here, J n and J p represent the electron and hole current, respectively, throughout the Ta 3 N 5 electrode, and q is the elementary charge. The continuity equations were only solved inside the electrode, as conduction bands are not formed in the liquid where ionic charge transport dominates. ,, In this regard, appropriate boundary conditions must be applied at both the electrode bulk and liquid interface, respectively. Deep within the Ta 3 N 5 electrode, the carrier concentration was set equal to the bulk values (forming Dirichlet boundary conditions for electrons and holes), whereas Neumann boundary conditions were applied at the semiconductor–liquid interface because of the electron ( J n | int ) and hole ( J p | int ) current transfer expressions , Here, n s and p s are, respectively, surface electron and hole concentration; n s0 and p s0 are the corresponding surface electron and hole concentrations in equilibrium; v t, n and v t, p are the electron and hole transfer velocities (essentially rate terms).…”
Section: Methods Sectionmentioning
confidence: 99%
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