Utilizing Domain Engineering to Achieve High-Polarization Relaxor Ferroelectrics for Low-Consumption Ceramic Capacitors
Zixiong Sun,
Liming Diwu,
Yongming Hu
et al.
Abstract:This study focuses on incorporating NaNbO 3 (NN) into the Ba 0.85 Ca 0.15 Zr 0.9 Ti 0.1 O 3 (BCZT) lattice to form (1 − x)BCZT-xNN ceramics. Although antiferroelectricity was not observed, an observed domain-movement-diminishment behavior with increasing NN dopant induced the formation of high polarization walls (HPWs) between adjacent C-phases. The 0.90BCZT-0.10NN composition exhibited superior polarization compared to most BCZT-based ferroelectrics, as validated by mathematical derivation. Integration of the… Show more
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