UV-assisted low-temperature sol–gel deposition of Pb(Zr0.4Ti0.6)O3 film and its photoelectrical properties

Yue, Jianshe; Chen, Yuanqing; Li, Lingwei; Zhang, Kaixuan; Li, Zhen

doi:10.1007/s10971-017-4457-1

Cited by 14 publications

(7 citation statements)

References 21 publications

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“…1). [56] The group of Prof. Trolier-McKinstry (female) fabricated Bi 3 NbO 7 (BNO) ferroelectric thin films by the deposition of solutions made by a modified Pechini's method, [127] irradiation with an UV lamp of 260 nm and annealing on hot plate at 450 C (see Fig. 1).…”

Section: Iii10 Uv Excimer Lampsmentioning

confidence: 99%

“…1). [11,12,14,39,40,44,46, Fukushima et al, [74] and Budd et al, [75,76] were among the first that demonstrated the successful fabrication of ferroelectric oxide thin films (PbTiO 3 , Pb(Zr,Ti)O 3 , PZT and 2014 [39] 2010 [46] 2019 [40] 2017 [44] 2017 [73] 2015 [72] 2014 [11] 2020 [71] 2011 [63][64][65] 2014 [62] 2008 [68] 2010 [67] 1999 [61] 2020 [70] 2003 [69] 2004 [12] 2000 [66] 2014 [62] 2016 [58] 2008 [57] 2017 [56] 2008 [14] 2001 [60] 2013 [59] 2018 [52] 2003 [53] 2000 [54] 2009 [55] The graphic shows the ferroelectric composition of the film, the processing temperature at which they were processed and the ferroelectric remanent polarization (PR) measured in them. The CSD strategy/ies used for the low-temperature solution processing of the films are also shown.…”

Section: Introductionmentioning

confidence: 99%

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Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Bretos

Jiménez

Ricote

et al. 2020

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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This Technical Review presents the state-of-the-art in low-temperature chemical solution deposition (CSD) processing of ferroelectric oxide thin films. To achieve the integration of multifunctional crystalline oxides with flexible and semiconductor devices is today crucial to meet the demands of coming electronic devices. Hence, amorphous metal oxide semiconductors have been recently introduced in thin film electronics. However, their benefits are limited compared to those of ferroelectric oxides, which intrinsic multifunctionality would make possible multiple operations in the device. But, ferroelectricity is linked to a non centrosymmetric crystal structure that is achieved, in general, at high temperatures, over 500C. These temperatures exceed the thermal stability of flexible polymer substrates and are not compatible with those permitted in the current fabrication routines of Si-based devices. In addition, the manufacturing of flexible electronic devices not only calls for low-temperature fabrication processes but also for deposition techniques that scale easily to the large areas required in flexible devices. In this regard, CSD processes are the best positioned today to integrate metal oxide thin-films with flexible substrates, as a large-area, low-cost, high-throughput fabrication technique. Here, we review the progress made in the last years in fabricating at low temperature crystalline ferroelectric oxide thin films via CSD methods, highlighting the recent work of our group in the preparation of ferroelectric oxide thin films on flexible polyimide substrates.

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Section: Iii10 Uv Excimer Lampsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Bretos

Jiménez

Ricote

et al. 2020

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…Piezoelectric ceramic materials have been used in various applications, such as sensors, actuators, nonvolatile ferroelectric memory devices, microelectromechanical systems (MEMS), and nanogenerators (NGs) [42][43][44][45].…”

Section: Piezoelectric Materialsmentioning

confidence: 99%

A review on piezoelectric fibers and nanowires for energy harvesting

Zaarour

Zhu

Huang

et al. 2019

Journal of Industrial Textiles

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Recent advances in self-powered electronic devices have urged the development of energy-harvesting technology. Batteries are gradually unable to satisfy the practical requirements for powering the different types of microelectronic devices owing to their drawbacks such as occupying a significant percentage and weight of portable products, the need to replace or recharge them, constructing an important environmental impact, and the probable seepage of electrolyte solutions. Various technologies for converting renewable energies into electricity have been reported. Particularly, energy harvesters based on piezoelectricity to convert mechanical energy into usable electricity have received considerable attention. Electrospun fibers from piezoelectric polymers and inorganic nanowires as emerging piezoelectric materials have shown great potential for energy-harvesting applications. This review paper summarizes energy-harvesting technology based on piezoelectric polymeric fibers, inorganic piezoelectric fibers, and inorganic nanowires. A comprehensive overview of fundamentals of piezoelectric effect, types of piezoelectric materials, energy harvesting from fibers, energy harvesting from inorganic nanowires, and energy harvesting from polymeric/inorganic fibers and nanowires composites are discussed.

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“…The P r , E c , and leakage current of the PZT film were 23.6 μC/ cm 2 , 109.6 kV/cm ( Figure 6(b)), and 10 −6 A/cm 2 , respectively [15]. Similarly, ferroelectric PZT films were fabricated on LaNiO 3 electrode at a low temperature of 450-480°C by a method assisted with UV irradiation [32]. The obtained film annealed at 480°C showed a P r of 21 μC/ cm 2 and leakage current of 9.71 × 10 −8 A/cm 2 at 100 kV/cm, with good retention and high stability of photocurrent.…”

Section: Ultraviolet-assisted Annealingmentioning

confidence: 99%

Lead Zirconium Titanate Films and Devices Made by a Low- Temperature Solution-Based Process

Tue¹,

Takamura²

2018

Ferroelectrics and Their Applications

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As the most important multifunctional oxide material, lead zirconium titanate (PZT) has a diverse range of applications such as piezo actuators, ferroelectric nonvolatile memories, sensors, and transducers due to its excellent structural and electrical properties. However, it generally requires a high annealing temperature (above 600°C) to attain the desired properties, which hinders the integration of PZT with silicon-based Complementary Metal Oxide Semiconductor (CMOS). Therefore, the fabrication of PZT films by a chemical solution deposition (CSD) at temperatures compatible with Si-CMOS technology or even with polymeric substrate for flexible electronics would be of high technological interest. So far, different strategies to decrease the crystallization temperature of CSD-derived PZT films have been studied. This chapter presents a critical review on the low-temperature solution-processed PZT films and devices, and addresses challenges for fundamental understanding and practical integration of multifunctional PZT in devices. In the first part, recent advances in fabrication of CSD-derived PZT films at a low temperature are thoroughly reviewed. The second part discusses various techniques for patterning PZT into micro-nano-sized patterns. Lastly, some potential applications of the low-temperature CSD-derived PZT films and devices are demonstrated.

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UV-assisted low-temperature sol–gel deposition of Pb(Zr0.4Ti0.6)O3 film and its photoelectrical properties

Cited by 14 publications

References 21 publications

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

Low-Temperature Solution Approaches for the Potential Integration of Ferroelectric Oxide Films in Flexible Electronics

A review on piezoelectric fibers and nanowires for energy harvesting

Lead Zirconium Titanate Films and Devices Made by a Low- Temperature Solution-Based Process

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