UV-Induced Photoconduction in Diamond

Pace, E.; Sio, A. De; Scuderi, S.

doi:10.1007/11378235_23

Cited by 4 publications

(2 citation statements)

References 92 publications

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“…We are using our fsEC systems to evaluate the performance of diamond and selenium photoconductors. Diamond detectors are particularly interesting for detection of high energy photons for a variety of reasons, including their radiation hardness, low leakage current, and visible light insensitivity (solar-blindness) [75]. This last factor is of particular interest for fsEC-based XUV generation where the scattered light from the fundamental near-infrared light in the cavity can be orders of magnitude brighter than the generated harmonics.…”

Section: Detection Of Harmonicsmentioning

confidence: 99%

XUV frequency combs via femtosecond enhancement cavities

Mills¹,

Hammond²,

Lam³

et al. 2012

J. Phys. B: At. Mol. Opt. Phys.

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Abstract. We review the current state of tabletop extreme ultraviolet (XUV) sources based on high harmonic generation (HHG) in femtosecond enhancement cavities (fsEC). Recent developments have enabled generation of high photon flux (10 14 photons/sec) in the XUV, at high repetition rates (>50 MHz) and spanning the spectral region from 40 nm -120 nm. This level of performance has enabled precision spectroscopy with XUV frequency combs and promises further applications in XUV spectroscopic and photoemission studies. We discuss the theory of operation and experimental details of the fsEC and XUV generation based on HHG, including current technical challenges to increasing the photon flux and maximum photon energy produced by this type of system. Current and future applications for these sources are also discussed.

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Section: Detection Of Harmonicsmentioning

confidence: 99%

XUV frequency combs via femtosecond enhancement cavities

Mills¹,

Hammond²,

Lam³

et al. 2012

J. Phys. B: At. Mol. Opt. Phys.

View full text Add to dashboard Cite

show abstract

“…It is worth noting that the nitrogen-rich Ib diamond substrate has not been removed, thus affecting the response of the single-crystal device at k > 225 nm. In fact, at these wavelengths, the photons have a penetration length greater than the thickness of the homoepitaxial layer [28], and are strongly absorbed at the diamond substrate, thus contributing to the structures seen in the device responsivity at wavelengths k > 225 nm.…”

Section: Uv Photodetector Characterizationmentioning

confidence: 99%