UV light activation of tin oxide thin films for NO2 sensing at low temperatures

Comini, Elisabetta; Faglia, Guido; Sberveglieri, G.

doi:10.1016/s0925-4005(01)00796-1

Cited by 264 publications

(148 citation statements)

References 10 publications

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“…A parameter that influences the kinetics is the presence of light. It has been reported that the recovery properties of ZnO and SnO 2 sensors were improved remarkably by UV light irradiation [19][20][21]. Preliminary experiments show that the relaxation time under UV illumination in the ZnO FET decreases by orders of magnitude.…”

Section: Threshold Voltage Dynamicsmentioning

confidence: 95%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors Andringa, Anne-Marije; Vlietstra, Nynke; Smits, Edsger C. P.; Spijkman, Mark-Jan; Gomes, Henrique L.; Klootwijk, Johan H.; Blom, Paul W. M.; de Leeuw, Dago M. Link to publication in University of Groningen/UMCG research database Citation for published version (APA): Andringa, A-M., Vlietstra, N., Smits, E. C. P., Spijkman, M-J., Gomes, H. L., Klootwijk, J. H., ... de Leeuw, D. M. (2012). Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors. Sensors and actuators b-Chemical, 171(27), 1172-1179. DOI: 10.1016/j.snb.2012 Copyright Other than for strictly personal use, it is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license (like Creative Commons).Take-down policy If you believe that this document breaches copyright please contact us providing details, and we will remove access to the work immediately and investigate your claim. Here we investigate the dynamics of charge trapping and recovery as a function of temperature by monitoring the threshold voltage shift. The threshold voltage shifts follow a stretched-exponential time dependence with thermally activated relaxation times. We find an activation energy of 0.1 eV for trapping and 1.2 eV for detrapping. The attempt-to-escape frequency and characteristic temperature have been determined as 1 Hz and 960 K for charge trapping and 10 11 Hz and 750 K for recovery, respectively. Thermally stimulated current measurements confirm the presence of trapped charge carriers with a trap depth of around 1 eV. The obtained functional dependence is used as input for an analytical model that predicts the sensor's temporal behavior. The model is experimentally verified and a real-time sensor has been developed. The perfect agreement between predicted and measured sensor response validates the methodology developed. The analytical description can be used to optimize the driving protocol. By adjusting the operating temperature and the duration of charging and resetting, the response time can be optimized and the sensitivity can be maximized for the desired partial NO 2 pressure window.

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Section: Threshold Voltage Dynamicsmentioning

confidence: 95%

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Andringa

Vlietstra

Smits

et al. 2012

Sensors and Actuators B: Chemical

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“…These compounds have attracted much interest due to their wide range of applications, mainly as chemoresistors [1,6]. The traditional semiconductor gas sensors (e.g., ZnO, WO3, SnO2, and In2O3) have generally found application for use at temperatures >200 °C, hindering the monitoring of gas composition in an environment containing explosive species since high temperature could trigger an explosion [7]. In this way, the UV-light irradiation becomes an efficient and low-cost approach for the activation of the chemical reactions at room temperature [7][8][9].…”

Section: Introductionmentioning

confidence: 99%

ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature

Silva

Lucchini

M’Peko

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:We report herein the efficiency of microwave-assisted synthesis for obtaining ZnO/SnO2 heterostructures for room-temperature gas-sensing applications. The sensing performances of the traditional oxide materials have been found for applications above 200 °C. However, these temperatures were here reduced to room temperature by considering sensing activity photoactivated by UV light, even for ppb ozone (O3) levels. The heterojunctions exhibited a fast response, total reversibility, and selectivity to oxidizing gases, especially O3 gas. This investigation provides an efficient way to obtain heterostructures exhibiting remarkable properties for practical applications as O3 gas sensor devices.

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“…Ultraviolet illumination was used to improve the sensitivity at room temperature. 12,13 However, this method causes difficulties in portable or miniaturized sensors. Doping with materials in the semiconductors may affect the electron transfer, which is considered in our investigation.…”

mentioning

confidence: 99%

Room temperature gas sensing properties of SnO2/multiwall-carbon-nanotube composite nanofibers

Tao

Wang

et al. 2007

Applied Physics Letters

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Pure SnO 2 and SnO 2 polycrystalline nanofibers doped with multiwall carbon nanotubes ͑MWCNTs͒ are synthesized by electrospinning followed by calcination in air at 500°C. The measurement results by sensors fabricated from these fiber mats at steady state show that the n-type SnO 2 /MWCNT nanofibers are able to detect carbon monoxide at 50 ppm at room temperature, while the pure SnO 2 nanofibers are insensitive up to 500 ppm. The MWCNT doped SnO 2 nanofibers have demonstrated their potentials for wearable room temperature gas sensors with low cost and power consumption.

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UV light activation of tin oxide thin films for NO2 sensing at low temperatures

Cited by 264 publications

References 10 publications

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

Dynamics of charge carrier trapping in NO2 sensors based on ZnO field-effect transistors

ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature

Room temperature gas sensing properties of SnO2/multiwall-carbon-nanotube composite nanofibers

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