2006
DOI: 10.1016/j.msec.2005.10.019
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UV photooxidation induced structural and photoluminescence behaviors in vapor-etching based porous silicon

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Cited by 18 publications
(12 citation statements)
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“…2), together with the existence of peaks around 2250 cm −1 and 2100 cm −1 originating from Si Si H and O Si H[23].…”
mentioning
confidence: 94%
“…2), together with the existence of peaks around 2250 cm −1 and 2100 cm −1 originating from Si Si H and O Si H[23].…”
mentioning
confidence: 94%
“…Indeed, ageing in ambient air replaces unstable SiHx bonds by stable ones leading to a degradation of the cell characteristics [15]. However, it was demonstrated that the SiHx to SiOx transition occurs via (OySiHx) intermediate states, which are suspected to cause degradation [21].…”
Section: Contributed Articlementioning
confidence: 99%
“…The band centred at 1080 cm -1 corresponding to the Si-O stretching vibration mode widens. The shoulder in the 1100-1250 cm -1 region, corresponds to the out-of-phase Si-O stretching vibration mode [14][15][16][17]. Compared with the (ox-Si) spectrum, the Si-O x related vibration bands are largely strengthened in the (ox-PS) spectra.…”
Section: Rapid Thermal Oxidation Of Porous Siliconmentioning
confidence: 99%